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參數(shù)資料
| 型號(hào)： | HM-6508883 |
| 廠商： | Intersil Corporation |
| 英文描述： | 1024 x 1 CMOS RAM |
| 中文描述： | 1024 × 1 CMOS存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大小： | 234K |
| 代理商： | HM-6508883 |
6-71
Absolute Maximum Ratings
Thermal Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to VCC +0.3V
Typical Derating Factor. . . . . . . . . . .1.5mA/MHz Increase in ICCOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range. . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to +0.8V
Input High Voltage . . . . . . . . . . . . . . . . . . . . . . . .VCC -2.0V to VCC
Input Rise and Fall Time. . . . . . . . . . . . . . . . . . . . . . . . . . 40ns Max.
Thermal Resistance (Typical, Note 1)
CERDIP Package . . . . . . . . . . . . . . . .
Maximum Storage Temperature Range . . . . . . . . .-65
o
C to +150
o
C
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . .+175
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . .+300
o
C
θ
JA
θ
JC
75
o
C/W
15
o
C/W
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1925 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
TABLE 1. HM-6508/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS
Device Guaranteed and 100% Tested
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Output Low Voltage
VOL
VCC = 4.5V,
IOL = 3.2mA
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
0.4
V
Output High Voltage
VOH
VCC = 4.5V,
IOH = -0.4mA
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
2.4
-
V
Input Leakage Current
II
VCC = 5.5V,
VI = GND or VCC
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-1.0
+1.0
μ
A
Output Leakage Current
IOZ
VCC = 5.5V,
VO = GND or VCC
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-1.0
+1.0
μ
A
Data Retention Supply Current
ICCDR
VCC = 2.0V,
E = VCC,
IO = 0mA,
VI = VCC or GND
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
5
μ
A
HM-6508B/883
HM-6508/883
-
10
μ
A
Operating Supply Current
ICCOP
VCC = 5.5V,
(Note 2),
E = 1MHz,
IO = 0mA,
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
4
mA
Standby Supply Current
ICCSB
VCC = 5.0V,
IO = 0mA,
VI = VCC or GND
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
10
μ
A
NOTES:
1. All voltages referenced to device GND.
2. Typical derating 1.5mA/MHz increase in ICCOP.
HM-6508/883
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