參數(shù)資料
型號(hào)： HM1-6561883
廠商： Intersil Corporation
英文描述： 256 x 4 CMOS RAM
中文描述： 256 × 4 CMOS存儲(chǔ)器
文件頁(yè)數(shù)： 3/9頁(yè)
文件大小： 143K
代理商： HM1-6561883
6-119
Absolute Maximum Ratings
Thermal Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input or Output Voltage. . . . . . . . . . . . . . . GND -0.3V to VCC +0.3V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
CERDIP Package . . . . . . . . . . . . . . . .
Maximum Storage Temperature Range . . . . . . . . .-65
o
C to +150
o
C
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . .+175
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . .+300
o
C
θ
JA
θ
JC
74
o
C/W
18
o
C/W
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1944 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range. . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to +0.8V
Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . .VCC - 2.0V to VCC
Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . 40ns Max
TABLE 1. HM-6561/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS
Device Guaranteed and 100% Tested
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Output Low Voltage
VOL
VCC = 4.5V,
IOL = 1.6mA
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
0.4
V
Output High Voltage
VOH
VCC = 4.5V,
IOH = -0.4mA
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
2.4
-
V
Input Leakage Current
II
VCC = 5.5V,
VI = GND or VCC
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-1.0
+1.0
μ
A
Input/Output Leakage Current
IIOZ
VCC = 5.5V,
VIO = GND or
VCC
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-1.0
+1.0
μ
A
Data Retention Supply Current
ICCDR
VCC = 2.0V,
E = VCC,
IO = 0mA,
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
10
μ
A
Operating Supply Current
ICCOP
VCC = 5.5V,
(Note 2),
E = 1MHz,
W = GND,
VI = VCC or GND
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
4
mA
Standby Supply Current
ICCSB
VCC = 5.5V,
IO = 0mA,
VI = VCC or GND
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
10
μ
A
NOTES:
1. All voltages referenced to device GND.
2. Typical derating 1.5mA/MHz increase in ICCOP.
HM-6561/883
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