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參數(shù)資料
| 型號： | HM1-6561883 |
| 廠商： | Intersil Corporation |
| 英文描述： | 256 x 4 CMOS RAM |
| 中文描述： | 256 × 4 CMOS存儲器 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 143K |
| 代理商： | HM1-6561883 |
6-121
Test Load Circuit
NOTE:
1. Test head capacitance includes stray and jig capacitance.
TABLE 3. HM-6561/883 ELECTRICAL PERFORMANCE SPECIFICATIONS
SYMBOL
PARAMETER
CONDITIONS
NOTE
TEMPERATURE
LIMITS
UNITS
MIN
MAX
CI
Input Capacitance
VCC = Open, f = 1MHz,
All Measurements
Referenced to Device
Ground
1
T
A
= +25
o
C
-
8
pF
CO
Output Capacitance
VCC = Open, f = 1MHz,
All Measurements
Referenced to Device
Ground
1
T
A
= +25
o
C
-
10
pF
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters are characterized upon initial design and after major
process and/or design changes.
TABLE 4. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
METHOD
SUBGROUPS
Initial Test
100%/5004
-
Interim Test
100%/5004
1, 7, 9
PDA
100%/5004
1
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Group A
Samples/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Groups C & D
Samples/5005
1, 7, 9
DUT
1.5V
IOL
IOH
+
(NOTE 1) CL
EQUIVALENT CIRCUIT
HM-6561/883
相關PDF資料 |
PDF描述 |
|---|---|
| HM1-65787H-2 | HIGH SPEED CMOS SRAM |
| HM3-65787H-2 | HIGH SPEED CMOS SRAM |
| HM4-65787H-2 | HIGH SPEED CMOS SRAM |
| HMT-65787H-2 | HIGH SPEED CMOS SRAM |
| HM1-65787N-2 | HIGH SPEED CMOS SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HM1-6561-9 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HM1-6561B/883 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:256 x 4 CMOS RAM |
| HM1-6561B883 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:256 x 4 CMOS RAM |
| HM1-6561B-9 | 制造商:Harris Corporation 功能描述: 制造商:MHS>Matra Harris Semi 功能描述: 制造商:Harris Corporation 功能描述:Synchronous SRAM, 256 x 4, 18 Pin, Ceramic, DIP |
| HM1-6562B-8 | 制造商:Harris Corporation 功能描述:1-6562B-8 |
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