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參數(shù)資料
| 型號： | HM1-6561B883 |
| 廠商： | Intersil Corporation |
| 英文描述： | 256 x 4 CMOS RAM |
| 中文描述： | 256 × 4 CMOS存儲器 |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 143K |
| 代理商： | HM1-6561B883 |
6-125
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Die Characteristics
DIE DIMENSIONS:
132 x 160 x 19
±
1mils
METALLIZATION:
Type: Si - Al
Thickness: 11k
±
2k
GLASSIVATION:
Type: SiO
2
Thickness: 8k
±
1k
WORST CASE CURRENT DENSITY:
1.337 x 10
5
A/cm
2
LEAD TEMPERATURE
(10s soldering):
≤
300
o
C
Metallization Mask Layout
HM-6561/883
S1
DQ3 DQ2
DQ1
DQ0
S2
E
GND
A7
A6
A5
A0
A1
A2
A3
VCC
A4
W
HM-6561/883
相關PDF資料 |
PDF描述 |
|---|---|
| HM-6561 | 256 x 4 CMOS RAM |
| HM-6561883 | 256 x 4 CMOS RAM |
| HM1-6561883 | 256 x 4 CMOS RAM |
| HM1-65787H-2 | HIGH SPEED CMOS SRAM |
| HM3-65787H-2 | HIGH SPEED CMOS SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HM1-6561B-9 | 制造商:Harris Corporation 功能描述: 制造商:MHS>Matra Harris Semi 功能描述: 制造商:Harris Corporation 功能描述:Synchronous SRAM, 256 x 4, 18 Pin, Ceramic, DIP |
| HM1-6562B-8 | 制造商:Harris Corporation 功能描述:1-6562B-8 |
| HM1-65641-2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| HM1-65641-5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| HM1-65641-5+ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
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