參數(shù)資料
型號(hào): HM5117805TS-7
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
中文描述: 2M X 8 EDO DRAM, 70 ns, PDSO28
封裝: 0.300 INCH, PLASTIC, TSOP2-28
文件頁(yè)數(shù): 3/32頁(yè)
文件大?。?/td> 549K
代理商: HM5117805TS-7
EO rdc
HM5117805 Series
Data Sheet E0156H10
3
Pin Arrangement
28
27
26
25
24
23
22
21
20
19
18
17
16
15
1
2
3
4
5
6
7
8
9
10
11
12
13
14
V
CC
I/O0
I/O1
I/O2
I/O3
WE
RAS
NC
A10
A0
A1
A2
A3
V
CC
V
I/O7
I/O6
I/O5
I/O4
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
SS
(Top view)
28
27
26
25
24
23
22
21
20
19
18
17
16
15
1
2
3
4
5
6
7
8
9
10
11
12
13
14
V
CC
I/O0
I/O1
I/O2
I/O3
WE
RAS
NC
A10
A0
A1
A2
A3
V
CC
V
I/O7
I/O6
I/O5
I/O4
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
SS
HM5117805TS/LTS Series
(Top view)
HM5117805S/LS Series
HM5117805TT/LTT Series
HM5117805J/LJ Series
Pin Description
Pin name
Function
A0 to A10
Address input
— Row/Refresh address
— Column address
A0 to A10
A0 to A9
I/O0 to I/O7
RAS
CAS
WE
OE
Data input/Data output
Row address strobe
Column address strobe
Read/Write enable
Output enable
V
CC
NC
Power supply
No connection
相關(guān)PDF資料
PDF描述
HM5117805LJ-6 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
HM5117805LJ-7 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
HM5118160BLJ-6 1048576-word x 16-bit Dynamic Random Access Memory
HM5118160BLJ-7 1048576-word x 16-bit Dynamic Random Access Memory
HM5118160BLJ-8 1048576-word x 16-bit Dynamic Random Access Memory
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