型號(hào): | HM5117805TS-7 |
廠商: | ELPIDA MEMORY INC |
元件分類(lèi): | DRAM |
英文描述: | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
中文描述: | 2M X 8 EDO DRAM, 70 ns, PDSO28 |
封裝: | 0.300 INCH, PLASTIC, TSOP2-28 |
文件頁(yè)數(shù): | 30/32頁(yè) |
文件大?。?/td> | 549K |
代理商: | HM5117805TS-7 |
相關(guān)PDF資料 |
PDF描述 |
---|---|
HM5117805LJ-6 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
HM5117805LJ-7 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
HM5118160BLJ-6 | 1048576-word x 16-bit Dynamic Random Access Memory |
HM5118160BLJ-7 | 1048576-word x 16-bit Dynamic Random Access Memory |
HM5118160BLJ-8 | 1048576-word x 16-bit Dynamic Random Access Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
---|---|
HM5117805TT-5 | 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
HM5117805TT-6 | 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
HM5117805TT-7 | 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
HM51180J | 制造商:TT Electronics / BI Technologies 功能描述:Inductor Power Wirewound 18uH 5% 1KHz 4.7A 23mOhm DCR AXL 制造商:TT Electronics / BI Technologies 功能描述:Ind Power Wirewound 18uH 5% 1KHz 4.7A AXL |
HM51-180JLF | 制造商:BITECH 制造商全稱(chēng):Bi technologies 功能描述:Axially Leaded Miniature Power Inductors |