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參數(shù)資料
| 型號(hào)： | HM514260CLTT-6 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 262,144-word x 16-bit Dynamic Random Access Memory |
| 中文描述： | 262,144字× 16位動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 9/27頁(yè) |
| 文件大?。?/td> | 260K |
| 代理商： | HM514260CLTT-6 |
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HM514260C, HM51S4260C Series
9
AC Characteristics
(Ta = 0 to 70
°
C, V
CC
= 5 V
±
5%, V
SS
= 0 V)
(HM51(S)4260C-6R)
*1, *14, *15, *17, *18
(Ta = 0 to 70
°
C, V
CC
= 5 V
±
10%, V
SS
= 0 V)
(HM51(S)4260C-6/7/8)
*1, *14, *15, *17, *18
Test Conditions
Input rise and fall time: 5 ns
Input timing reference levels: 0.8 V, 2.4 V
Input levels: 0 V, 3 V
Output load: 2 TTL gate + C
L
(50 pF) (HM51(S)4260C-6R) (Including scope and jig)
2 TTL gate + C
L
(100 pF) (HM51(S)4260-6/7/8) (Including scope and jig)
Read, Write, Read-Modify-Write and Refresh Cycles
(Common Parameters)
HM514260C, HM51S4260C
-6/-6R
-7
-8
Parameter
Symbol Min
Max
Min
Max
Min
Max
Unit Notes
Random read or write cycle time
RAS
precharge time
RAS
pulse width
CAS
pulse width
t
RC
t
RP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
ODD
t
DZO
t
DZC
t
T
t
REF
t
REF
110
—
130
—
150
—
ns
40
—
50
—
60
—
ns
60
10000
70
10000
80
10000
ns
15
10000
20
10000
20
10000
ns
23
Row address setup time
0
—
0
—
0
—
ns
Row address hold time
10
—
10
—
10
—
ns
Column address setup time
0
—
0
—
0
—
ns
19
Column address hold time
RAS
to
CAS
delay time
RAS
to column address delay time
RAS
hold time
CAS
hold time
CAS
to
RAS
precharge time
OE
to Din delay time
OE
delay time from Din
CAS
setup time from Din
15
—
15
—
15
—
ns
19
20
45
20
50
20
60
ns
8
15
30
15
35
15
40
ns
9
15
—
20
—
20
—
ns
60
—
70
—
80
—
ns
10
—
15
—
15
—
ns
20
15
—
20
—
20
—
ns
0
—
0
—
0
—
ns
0
—
0
—
0
—
ns
Transition time (rise and fall)
3
50
3
50
3
50
ns
7
Refresh period
—
8
—
8
—
8
ms
Refresh period (L-version)
—
128
—
128
—
128
ms
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HM514260CLTT-6R | 262,144-word x 16-bit Dynamic Random Access Memory |
| HM514260CLTT-7 | 262,144-word x 16-bit Dynamic Random Access Memory |
| HM514260CLTT-8 | 262,144-word x 16-bit Dynamic Random Access Memory |
| HM514260CTT-6 | 262,144-word x 16-bit Dynamic Random Access Memory |
| HM514260CTT-6R | 262,144-word x 16-bit Dynamic Random Access Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM514260CLTT-6R | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x16 Fast Page Mode DRAM |
| HM514260CLTT-7 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:262,144-word x 16-bit Dynamic Random Access Memory |
| HM514260CLTT-8 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x16 Fast Page Mode DRAM |
| HM514260CLZ-6 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x16 Fast Page Mode DRAM |
| HM514260CLZ-7 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x16 Fast Page Mode DRAM |
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