參數(shù)資料
型號(hào): HM62V16256B
廠商: Hitachi,Ltd.
英文描述: 4 M SRAM (256-kword ×16-bit)(4 M 靜態(tài)RAM(256k字×16位))
中文描述: 四米的SRAM(256 - KWord的× 16位)(4個(gè)M靜態(tài)隨機(jī)存儲(chǔ)器(256k字× 16位))
文件頁(yè)數(shù): 17/17頁(yè)
文件大小: 78K
代理商: HM62V16256B
HM62V16256B Series
17
Revision Record
Rev. Date
Contents of Modification
Drawn by
Approved by
0.0
Jun. 26, 1998 Initial issue
M.Higuchi
K. Imato
0.1
Nov. 25, 1998 Change of format
Features
Change of Power dissipation
Active: 15 mW (typ) to TBD mW (typ)
Standby: 1.5
μ
W (typ) to TBD
μ
W (typ)
Change of Pin Arrangement (CSP)
Change of Block Diagram
DC Characteristics
I
CC2
typ: — mA to TBD mA
I
SB1
typ: —/—
μ
A to TBD/TBD
μ
A
I
max: 20/2
μ
A to 40/20
μ
A
AC Characteristics
t
BW
min: 60/70 ns to 55/70 ns
t
min: 55/70 ns to 50/55 ns
Low V
CC
Data Retention Characteristics
I
CCDR
typ: 1/1
μ
A to —/—
μ
A
I
max: 10/1
μ
A to 20/10
μ
A
Change of note1 and 2
Change of Timing Waveform(1),(2) and (3)
M.Higuchi
K. Imato
1.0
Mar. 8, 1999
Deletion of HM62V16256BLBT Series (TBT-48)
Features: Change of Power dissipation
Active: TBD mW (typ) to 9 mW (typ)
Standby: TBD
μ
W (typ) to 3
μ
W (typ)
DC Characteristics
I
CC2
typ: TBD mA to 3 mA
I
typ: TBD/TBD
μ
A to 1/1
μ
A
AC Characteristics
t
max: 35/45 ns to 40/45 ns
Low V
CC
Data Retention Characteristics
I
CCDR
typ: —/—
μ
A to 0.8/0.8
μ
A
Oct. 14, 1999 Low V
Data Retention Characteristics
Change of Timing Waveform(1) and (3)
M.Higuchi
K. Makuta
2.0
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