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參數(shù)資料
| 型號(hào)： | HM62V16256B |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4 M SRAM (256-kword ×16-bit)(4 M 靜態(tài)RAM(256k字×16位)) |
| 中文描述： | 四米的SRAM（256 - KWord的× 16位）（4個(gè)M靜態(tài)隨機(jī)存儲(chǔ)器（256k字× 16位）） |
| 文件頁(yè)數(shù)： | 5/17頁(yè) |
| 文件大?。?/td> | 78K |
| 代理商： | HM62V16256B |
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HM62V16256B Series
5
Operation Table
CS1
CS2
WE
OE
UB
LB
I/O0 to I/O7
I/O8 to I/O15
Operation
H
×
×
×
×
×
×
×
×
×
×
×
High-Z
High-Z
Standby
×
×
L
High-Z
High-Z
Standby
×
H
H
High-Z
High-Z
Standby
L
H
H
L
L
L
Dout
Dout
Read
L
H
H
L
H
L
Dout
High-Z
Lower byte read
L
H
H
L
L
H
High-Z
Dout
Upper byte read
L
H
L
×
×
×
L
L
Din
Din
Write
L
H
L
H
L
Din
High-Z
Lower byte write
L
H
L
L
H
High-Z
Din
Upper byte write
L
Note: H: V
IH
, L: V
IL
,
×
: V
IH
or V
IL
H
H
H
×
×
High-Z
High-Z
Output disable
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Power supply voltage relative to V
SS
Terminal voltage on any pin relative to V
SS
Power dissipation
V
CC
V
T
P
T
Tstg
–0.5 to + 4.6
V
–0.5*
1
to V
CC
+ 0.3*
2
1.0
V
W
Storage temperature range
–55 to +125
°
C
°
C
Storage temperature range under bias
Notes: 1. V
T
min: –3.0 V for pulse half-width
≤
30 ns.
2. Maximum voltage is +4.6 V.
Tbias
–10 to +85
DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
CC
V
SS
V
IH
V
IL
Ta
2.7
3.0
3.6
V
0
0
0
V
Input high voltage
2.0
—
V
CC
+ 0.3
0.6
V
Input low voltage
–0.3
—
V
1
Ambient temperature range
Note:
1. V
IL
min: –3.0 V for pulse half-width
≤
30 ns.
0
—
70
°
C
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