參數(shù)資料
型號: HN29W25611
廠商: Hitachi,Ltd.
英文描述: 256M AND type Flash Memory(256M AND型閃速存儲器)
中文描述: 256M AND型快閃記憶體(256M及型閃速存儲器)
文件頁數(shù): 1/43頁
文件大?。?/td> 347K
代理商: HN29W25611
HN29W25611 Series
256M AND type Flash Memory
More than 16,057-sector (271,299,072-bit)
ADE-203-995B (Z)
Rev. 1.0
Dec. 10, 1999
Description
The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has
fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase
is as small as (2048 + 64) bytes. Initial available sectors of HN29W25611 are more than 16,057 (98% of all
sector address) and less than 16,384 sectors.
Features
On-board single power supply (V
CC
): V
CC
= 3.3 V
±
0.3 V
Organization
AND Flash Memory: (2048 + 64) bytes
×
(More than 16,057 sectors)
Data register: (2048 + 64) bytes
Multi-level memory cell
2 bit/per memory cell
Automatic programming
Sector program time: 3.0 ms (typ)
System bus free
Address, data latch function
Internal automatic program verify function
Status data polling function
Automatic erase
Single sector erase time: 1.5 ms (typ)
System bus free
Internal automatic erase verify function
Status data polling function
相關(guān)PDF資料
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