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參數資料
| 型號： | HN29W25611 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 256M AND type Flash Memory(256M AND型閃速存儲器) |
| 中文描述： | 256M AND型快閃記憶體（256M及型閃速存儲器） |
| 文件頁數： | 5/43頁 |
| 文件大?。?/td> | 347K |
| 代理商： | HN29W25611 |
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HN29W25611 Series
5
Memory Map and Address
3FFFH
3FFEH
3FFDH
0002H
0001H
0000H
000H
2048 bytes
2048 bytes
2048 bytes
2048 bytes
2048 bytes
2048 bytes
64 bytes
64 bytes
64 bytes
64 bytes
64 bytes
64 bytes
1
1
800H
83FH
Control bytes
2048 + 64 bytes
Column address
Sector address
Address
Sector address
Column address
Cycles
SA (1): First cycle
SA (2): Second cycle
CA (1): First cycle
CA (2): Second cycle
I/O0
A0
A8
A0
A8
I/O1
A1
A9
A1
A9
I/O2
A2
A10
A2
A10
I/O3
A3
A11
A3
A11
I/O4
A4
A12
A4
×
I/O5
A5
A13
A5
×
I/O6
A6
×
*
2
A6
×
I/O7
A7
×
A7
×
Notes: 1. Some failed sectors may exist in the device. The failed sectors can be recognized
by reading the sector valid data written in a part of the column address 800 to 83F
(The specific address is TBD.). The sector valid data must be read and kept outside
of the sector before the sector erase. When the sector is programmed, the sector
valid data should be written back to the sector.
2. An
×
means "Don't care". The pin level can be set to either V
IL
or V
IH
, referred
to DC characteristics.
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PDF描述 |
|---|---|
| HN29W256AH03TE | Controller for AND Flash Memory(AND型閃速存儲器控制器) |
| HN29W256H02TE | Controller for AND Flash Memory(AND型閃速存儲器控制器) |
| HN29W6411A | 64M AND type Flash Memory(64M AND型閃速存儲器) |
| HN29W6484AH03TE | Controller for AND Flash Memory(AND型閃速存儲器控制器) |
| HN29W6484DH08TE | Controller for AND Flash Memory(AND型閃速存儲器控制器) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HN29W25611SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:AND Flash EEPROM |
| HN29W25611ST | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash Application Design Guidelines Others |
| HN29W25611ST-80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|AND FLASH|33MX8|CMOS|TSSOP|48PIN|PLASTIC |
| HN29W25611T | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
| HN29W25611T-50 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
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