參數(shù)資料
型號: HN29W6411A
廠商: Hitachi,Ltd.
英文描述: 64M AND type Flash Memory(64M AND型閃速存儲器)
中文描述: 6400 AND型快閃記憶體(64米及型閃速存儲器)
文件頁數(shù): 1/30頁
文件大小: 293K
代理商: HN29W6411A
HN29W6411A Series
64M AND type Flash Memory
More than 16,057-sector (67,824,768-bit)
ADE-203-865
D C
(Z)
Rev.
1
.0
eb Oct
. 20, 199
8
Description
The Hitachi HN29W6411A Series is a CMOS Flash Memory with AND type memory cells. It has fully
automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are
controlled by simple external commands. To fit the I/O card applications, the unit of programming and
erase is as small as (512 + 16) bytes. Initial available sectors of HN29W6411A are more than 16,057 (98%
of all sector address).
Features
On-board single power supply (V
CC
):
V
CC
= 3.3 V
±
0.3 V
V
CC
= 5.0 V
±
0.5 V
Organization
AND Flash Memory: (512 + 16) bytes
×
(More than 16,057 sectors)
Data register: (512 + 16) bytes
Automatic programming
Sector program time: 0.3 ms (typ)
Address, data latch function
Internal automatic program verify function
Status data polling function
Automatic erase
Single sector erase time: 0.8 ms (typ)
Block erase time: 0.8 ms (typ)
System bus free
Internal automatic erase verify function
Status data polling function
Erase mode
Single sector erase ((512 + 16) byte unit)
Block erase ((4096 + 128) byte unit)
Fast serial read access time:
First access time: 5
μ
s (max)
Serial access time: 50 ns (max)
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