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參數(shù)資料
| 型號： | HN29W25611T-50 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
| 中文描述： | 256M超過16057型快閃記憶體部門（271299072位） |
| 文件頁數(shù)： | 27/43頁 |
| 文件大?。?/td> | 347K |
| 代理商： | HN29W25611T-50 |
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HN29W25611 Series
27
Program (1) with CA before SC and Status Data Polling Timing Waveform
CE
SC
I/O0 to I/O7
RES
/
Busy
OE
WE
CDE
Notes: 1. The programming operation is not guaranteed when the number of the SC pulse exceeds (2112 – n).(i
≤
2111 – n, 0
≤
n
≤
2111)
2. The programming operation is not guaranteed when the number of the SC pulse exceeds (2112 – m).(j
≤
2111 – m, 0
≤
m
≤
2111)
3. Any commands, including reset command FFH, cannot be input while RDY/
is V
OL
.
4. The status returns to the standby status after RDY/
returns to High-Z.
5. By using program (1), data can be programmed additionally for each sector before erase.
6. This interval can be repeated (h – 1) cycle.(1
≤
h
≤
2048 + 64)
t
CES
t
WP
t
CDS
t
CDS
t
CDH
t
CDH
t
CDSS
t
CDH
t
CDSH
t
AS
t
AS
t
SDS
t
DS
t
DB
t
SCC
SPL
t
AH
t
AH
t
SDH
t
DH
t
DF
t
DF
t
CDS
t
SW
t
CDSS
t
DS
t
AS
t
AS
t
AS
t
AS
t
SDS
t
DH
t
AH
t
AH
t
AH
t
AH
t
SCS
t
WP
t
RP
t
WP
t
WP
t
WP
t
WP
t
WP
t
WP
t
CEH
t
CE
t
COS
t
CDH
t
SCHW
t
OEPS
t
RDY
t
OE
t
SW
t
CDS
t
WPH
t
CWC
t
OEWS
t
CWC
t
WPH
t
CWC
t
WPH
t
CWC
t
WPH
t
CWC
t
WPH
High-Z
High-Z*
4
10H
SA(1)
SA(2)
CA(1)
CA(2)
CA(1)'
CA(2)'
PD(n) PD(n+1)PD(n+i)*
1
*
1
*
2
*
3
PD(m) PD(m+1)PD(m+j)*
2
h–1 cycle*
6
I/O7=V
OL
I/O7=V
OH
t
SDH
t
SPL
t
SP
t
SP
t
SP
t
SP
t
SCC
40H
t
ASP
Program (1) with CA after SC and Status Data Polling Timing Waveform
CE
SC
I/O0 to I/O7
RES
RDY
/
Busy
OE
WE
CDE
Notes: 1. The programming operation is not guaranteed when the number of the SC pulse exceeds 2112.(0
≤
k
≤
2111)
2. The programming operation is not guaranteed when the number of the SC pulse exceeds (2112 – m).(j
≤
2111 – m, 0
≤
m
≤
2111)
3. Any commands, including reset command FFH, cannot be input while RDY/
Busy
is V
OL
.
4. The status returns to the standby status after RDY/
Busy
returns to High-Z.
5. By using program (1), data can be programmed additionally for each sector before erase.
6. This interval can be repeated h cycle.(1
≤
h
≤
2048 + 64)
t
CES
t
WP
t
CDS
t
CDS
t
CDH
t
CDH
t
CDSS
t
CDH
t
CDSH
t
AS
t
AS
t
SDS
t
DS
t
DB
t
SCC
SPL
t
AH
t
AH
t
SDH
t
DH
t
DF
t
DF
t
CDS
t
SW
t
CDSS
t
DS
t
AS
t
AS
t
SDS
t
DH
t
AH
t
AH
t
SDH
t
SCS
t
WP
t
RP
t
WP
t
WP
t
WP
t
WP
t
CEH
t
CE
t
COS
t
CDH
t
SCHW
t
OEPS
t
RDY
t
OE
t
SW
t
CDS
t
WPH
t
CWC
t
OEWS
t
CWC
t
WPH
t
CWC
t
WPH
High-Z
High-Z*
4
10H
SA(1)
SA(2)
PD0
PD1
CA(1)
CA(2)
PD(k)*
1
*
1
*
2
*
3
PD(m) PD(m+1)PD(m+j)*
2
h cycle*
6
I/O7=V
OL
I/O7=V
OH
t
SPL
t
SP
t
SP
t
SP
t
SP
t
SCC
40H
t
ASP
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PDF描述 |
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| HN29W25611T | 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
| HN29W25611T-50H | 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN29W25611T-50H | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
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| HN29W256SH02TE-1 | 制造商:Renesas Electronics Corporation 功能描述:256M FLASH CONTROLLER - Trays |
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| HN29W3221T-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:AND Flash EEPROM |
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