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| 型號(hào)： | HN29W25611T-50 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
| 中文描述： | 256M超過(guò)16057型快閃記憶體部門(mén)（271299072位） |
| 文件頁(yè)數(shù)： | 43/43頁(yè) |
| 文件大?。?/td> | 347K |
| 代理商： | HN29W25611T-50 |
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HN29W25611 Series
43
Revision Record
Rev. Date
Contents of Modification
Drawn by
Approved by
0.0
Jan. 8, 1999
Initial issue
M. Shirai
T. Totsuka
0.1
Jun. 28, 1999
Deletion of V
= 5.0 V
±
0.5 V operation
Sector program time: 1.0 ms to 3.0 ms
Single sector erase time: 1.0 ms to 1.5 ms
Error correction: more than 1 bit... to more than 3-bit...
Command Definition: Addition of Data recovery read item
Addition of description for Data recovery read
Change of Status transition
AC Characteristics
Change of parameter name: t
OEPS
to t
OER
t
OER
min: 200 ns to 250 ns
t
OEPS
min: 200 ns to 40 ns
t
ASE
typ: 1.0 ms to 1.5 ms
t
ASE
(Program1, 3) typ: 1.5 ms to 3.0 ms
t
ASE
(Program1, 3) max: 37.0 ms to 20.0 ms
t
ASE
(Program2) typ: 1.0 ms to 2.5 ms
t
ASE
(Program2) max: 35.0 ms to 20.0 ms
t
ASE
(Program3) typ: 2.0 ms to 3.5 ms
t
ASE
(Program3) max: 40.0 ms to 30.0 ms
t
CDSH
min: 0 ns to 30 ns
t
min: — to 40 ns
Change of Timing Waveforms
Serial read (1) (2), Serial read (1) with CA before SC,
Serial read (1) with CA after SC and Data recovery read
Notes
Change of description for Enable high system reliability 1
Deletion of description for Enable high system reliability 3
and Prohibit the command except command definition
M. Shirai
H. Uchida
1.0
Dec. 10, 1999
Features: Change of required architecture
Change of table for Command definition
Mode Description
Addition of description for Data Recovery Write
Addition of figure for Data Recovery Write
Change of Status Transition
Timing Waveforms: Addition of Data Recovery Write
Notes: Change all item
Addition of flowcharts
Change of contents
Addition of Memory structure
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN29W25611T | 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
| HN29W25611T-50H | 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
| HN29W25611 | 256M AND type Flash Memory(256M AND型閃速存儲(chǔ)器) |
| HN29W256AH03TE | Controller for AND Flash Memory(AND型閃速存儲(chǔ)器控制器) |
| HN29W256H02TE | Controller for AND Flash Memory(AND型閃速存儲(chǔ)器控制器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN29W25611T-50H | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
| HN29W256H02TE-1 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:MEMORY CONTROLLER |
| HN29W256SH02TE-1 | 制造商:Renesas Electronics Corporation 功能描述:256M FLASH CONTROLLER - Trays |
| HN29W3221T-12 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:AND Flash EEPROM |
| HN29W3221T-15 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:AND Flash EEPROM |
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