參數(shù)資料
型號: HN29WB800
廠商: Hitachi,Ltd.
英文描述: 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
中文描述: 1048576字× 8位/ 524288字× 16位CMOS閃存
文件頁數(shù): 1/37頁
文件大小: 170K
代理商: HN29WB800
HN29WT800 Series
HN29WB800 Series
1048576-word
×
8-bit / 524288-word
×
16-bit CMOS Flash Memory
ADE-203-537A(Z)
Rev. 1.0
May. 9, 1997
Description
The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword
×
8-bit/512-kword
×
16-bit CMOS Flash
Memory with DINOR (DIvided bitline NOR) type memory cells, that realize programming and erase
capabilities with a single 3.3 V power supply. The built-in Sequence Controller allows Automatic
Program/Erase without complex external control. HN29WT800 Series, HN29WB800 Series enable the low
power and high performance systems such as mobile, personal computing and communication products.
Features
On-board single power supply (V
CC
): V
CC
= 3.3 V
±
0.3 V
Access time: 80/100/120 ns (max)
Low power dissipation:
I
CC
= 30 mA (max) (Read)
I
CC
= 200
μ
A (max) (Standby)
I
CC
= 40 mA (max) (Program)
I
CC
= 40 mA (max) (Erase)
I
CC
= 1
μ
A (typ) (Deep powerdown)
Automatic page programming:
Programming time: 25 ms (typ)
Program unit: 128 word
Automatic erase:
Erase time: 50 ms (typ)
Erase unit: Boot block; 8-kword/16-kbyte
×
1
Parameter block; 4-kword/8-kbyte
×
2
Main block;16-kword/32-kbyte
×
1
32-kword/64-kbyte
×
15
This product is compatible with M5M29FB/T800xx by Ltd. Mitsubishi.
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相關(guān)代理商/技術(shù)參數(shù)
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