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參數(shù)資料
| 型號(hào)： | HN29WB800 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| 中文描述： | 1048576字× 8位/ 524288字× 16位CMOS閃存 |
| 文件頁數(shù)： | 16/37頁 |
| 文件大小： | 170K |
| 代理商： | HN29WB800 |
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HN29WT800 Series, HN29WB800 Series
16
DC Characteristics
(V
CC
= 3.3 V
±
0.3 V, Ta = 0 to +70C)
Parameter
Symbol Min
Typ
Max
Unit
Test conditions
Input leakage current
I
LI
I
LO
I
SB1
I
SB2
–1
—
1
μ
A
μ
A
μ
A
μ
A
Vin = V
SS
to V
CC
Vout = V
SS
to V
CC
Vin = V
IH
/V
IL
,
CE
=
RP
=
WP
= V
IH
Vin = V
SS
or V
CC
,
CE
=
RP
=
WP
= V
CC
±
0.3 V
Vin = V
IH
/V
IL
,
RP
= V
IL
Vin = V
SS
or V
CC
,
RP
= V
SS
±
0.3 V
Vin = V
/V
,
CE
= V
,
RP
=
OE
= V
IH
, f = 10 MHz,
Iout = 0 mA
Vin = V
/V
,
CE
=
WE
= V
IL
,
RP
=
OE
= V
IH
Vin = V
IH
/V
IL
,
CE
=
RP
=
WP
= V
IH
Vin = V
IH
/V
IL
,
CE
=
RP
=
WP
= V
IH
Vin = V
IH
/V
IL
,
CE
=
RP
=
WP
= V
IH
RP
= V
HH
max
A9 = V
ID
max
Output leakage current
–10
—
10
Standby V
CC
current
—
50
200
—
1
5
Deep powerdown V
CC
current
I
SB3
I
SB4
I
CC1
—
5
15
μ
A
μ
A
—
1
5
Read V
CC
current
—
7
30
mA
Write V
CC
current
I
CC2
—
—
30
mA
Programming V
CC
current
Erasing V
CC
current
Suspend V
CC
current
RP
all block unlocked current
I
CC3
I
CC4
I
CC5
I
RP
I
ID
V
ID
V
HH
V
IL
V
IH
V
OL
V
OH1
—
—
40
mA
—
—
40
mA
—
—
200
μ
A
μ
A
μ
A
—
—
100
A9 intelligent identifier current
—
—
100
A9 intelligent identifier voltage
RP
unlocked voltage
11.4
12.0
12.6
V
11.4
12.0
12.6
V
Input voltage
–0.5
—
0.8
V
2.0
—
V
CC
+ 0.5 V
0.45
Output voltage
—
—
V
I
OL
= 5.8 mA
I
OH
= –2.5 mA
0.85
×
V
C C
V
CC
- 0.4 —
1.2
—
—
V
V
OH2
V
LKO
—
V
I
OH
= –100
μ
A
Low V
CC
lock-out voltage*
2
Notes: 1. All currents are RMS unless otherwise noted. Typical values at V
CC
= 3.3 V, Ta = 25C.
2. To protect initiation of write cycle during V
powerup/powerdown, a write cycle is locked out for V
CC
less than V
. If V
is less than V
LKO
Write State Machine is reset to read mode. When the Wirte
State Machine is in Busy state, if V
CC
is less than V
LKO
, the alternation of memory contents may
occur.
—
—
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN29WT800 | 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| HN462532 | 4096-word X 8-bit UV Erasable and Programmable Read Only Memory |
| HN462716 | 2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY |
| HN462716G | 2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY |
| HN462732 | 4096-WORD x 8-BIT UV ERASABLE AND PROGRAMMABLE READ ONLY MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN29WB800FP-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| HN29WB800FP-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| HN29WB800FP-8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| HN29WB800R-10 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
| HN29WB800R-12 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory |
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