參數(shù)資料
型號: HN29WB800
廠商: Hitachi,Ltd.
英文描述: 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
中文描述: 1048576字× 8位/ 524288字× 16位CMOS閃存
文件頁數(shù): 17/37頁
文件大?。?/td> 170K
代理商: HN29WB800
HN29WT800 Series, HN29WB800 Series
17
AC Characteristics
(V
CC
= 3.3 V
±
0.3 V, Ta = 0 to +70C)
Test Conditions
Input pulse levels: V
IL
= 0 V, V
IH
= 3.0 V
Input rise and fall time:
10 ns (HN29WT/WB800-10/12 Series)
:
5 ns (HN29WT/WB800-8 Series)
Output load: 1 TTL gate +100 pF (Including scope and jig.) (HN29WT/WB800-10/12 Series)
: 1 TTL gate +30 pF (Including scope and jig.) (HN29WT/WB800-8 Series)
Reference levels for measuring timing: 1.5 V
V
CC
Powerup/Powerdown Timing
Parameter
RP
= V
IH
setup time from V
CC
min
Note: During powerup/powerdown, by the noise pulses on control pins, the device has possibility of
accidental erasure or programming. The device must be protected against initiation of write cycle for
memory contents during powerup/powerdown. The delay time of min 2
μ
s is always required before
read operation or write operation is initiated from the time V
reaches V
min during
powerup/powerdown. By holding
RP
V
IL
, the contents of memory is protected during V
powerup/powerdown. During powerup,
RP
must be held V
for min 2
μ
s from the time V
reaches V
CC
min. During powerdown,
RP
must be held V
until V
reaches V
.
RP
doesn’t have latch mode, so
RP
must be held V
IH
during read operation or erase/program operation.
Symbol
Min
Typ
Max
Unit
t
VCS
2
μ
s
t
PS
t
VCS
V
CC
CE
RP
WE
t
PS
Read/Write inhibit
Read/Write inhibit
Read/Write inhibit
相關(guān)PDF資料
PDF描述
HN29WT800 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
HN462532 4096-word X 8-bit UV Erasable and Programmable Read Only Memory
HN462716 2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY
HN462716G 2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY
HN462732 4096-WORD x 8-BIT UV ERASABLE AND PROGRAMMABLE READ ONLY MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HN29WB800FP-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
HN29WB800FP-12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
HN29WB800FP-8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
HN29WB800R-10 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory
HN29WB800R-12 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory