參數(shù)資料
型號(hào): HS1-82C37ARH-Q
廠商: INTERSIL CORP
元件分類: DMA控制器
英文描述: Radiation Hardened CMOS High Performance Programmable DMA Controller
中文描述: 4 CHANNEL(S), 5 MHz, DMA CONTROLLER, CDIP40
封裝: METAL SEALED, SIDE BRAZED, CERAMIC, DIP-40
文件頁(yè)數(shù): 1/28頁(yè)
文件大?。?/td> 253K
代理商: HS1-82C37ARH-Q
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright
Harris Corporation 1995
1
S E M I C O N D U C T O R
HS-82C37ARH
Radiation Hardened CMOS High
Performance Programmable DMA Controller
Description
The Harris HS-82C37ARH is an enhanced, radiation
hardened CMOS version of the industry standard 8237A
Direct Memory Access (DMA) controller, fabricated using the
Harris hardened field, self-aligned silicon gate CMOS
process. The HS-82C37ARH offers increased functionality,
improved performance, and dramatically reduced power
consumption for the radiation environment. The high speed,
radiation hardness, and industry standard configuration of
the HS-82C37ARH make it compatible with radiation
hardened microprocessors such as the HS-80C85RH and
the HS-80C86RH.
The HS-82C37ARH can improve system performance by
allowing external devices to transfer data directly to or from
system memory. Memory-to-memory transfer capability is
also provided, along with a memory block initialization
feature. DMA requests may be generated by either
hardware or software, and each channel is independently
programmable with a variety of features for flexible
operation.
Static CMOS circuit design insures low operating power and
allows gated clock operation for an even further reduction of
power. Multimode programmability allows the user to select
from three basic types of DMA services, and reconfiguration
under program control is possible even with the clock to the
controller stopped. Each channel has a full 64K address and
word count range, and may be programmed to autoinitialize
these registers following DMA termination (end of process).
The Harris hardened field CMOS process results in
performance equal to or greater than existing radiation resis-
tant products at a fraction of the power.
Features
Radiation Hardened
- Total Dose >10
5
RAD (Si)
- Transient Upset > 10
8
RAD (Si)/s
- Latch Up Free EPI-CMOS
Low Power Consumption
- IDDSB = 50
μ
A Maximum
- IDDOP = 4.0mA/MHz Maximum
Pin Compatible with NMOS 8237A and the Harris
82C37A
High Speed Data Transfers Up To 2.5 MBPS With 5MHz
Clock
Four Independent Maskable Channels With Autoinitializa-
tion Capability
Expandable to Any Number of Channels
Memory-to-Memory Transfer Capability
CMOS Compatible
Hardened Field, Self-Aligned, Junction Isolated CMOS
Process
Single 5V Supply
Military Temperature Range -55
o
C to +125
o
C
August 1995
Spec Number
518058
File Number
3042.1
D
Ordering Information
PART NUMBER
TEMPERATURE RANGE
PACKAGE
HS1-82C37ARH-Q
-55
o
C to +125
o
C
40 Lead SBDIP
HS1-82C37ARH-8
-55
o
C to +125
o
C
40 Lead SBDIP
HS1-82C37ARH-Sample
+25
o
C
40 Lead SBDIP
HS9-82C37ARH-Q
-55
o
C to +125
o
C
42 Lead Ceramic Flatpack
HS9-82C37ARH-8
-55
o
C to +125
o
C
42 Lead Ceramic Flatpack
HS9-82C37ARH/Sample
+25
o
C
42 Lead Ceramic Flatpack
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