參數(shù)資料
型號: HSMS-8012
英文描述: Schottky Barrier Chips for Hybrid Integrated Circuits(混合集成電路應(yīng)用的肖特基勢壘二極管)
中文描述: 肖特基芯片的混合集成電路(混合集成電路應(yīng)用的肖特基勢壘二極管)
文件頁數(shù): 1/4頁
文件大小: 36K
代理商: HSMS-8012
Schottky Barrier Chips for
Hybrid Integrated Circuits
Technical Data
Features
Thermocompression/
Thermosonically Bondable
Gold Metallization
Silicon Nitride Passivation
Uniform Electrical
Characteristics
Batch Matched Versions
Available
Planar Construction
Available in Many Electrical
Selections
Ideal for Hybrid Integrated
Circuits
HSMS-0005/06
HSMS-8002/12
Chip Dimensions
D
Y
Z
X
2
X
DIMENSIONS
D
X
Y
Z
Top Contact
NOTES:
1. Dimensions in mIcrons (1/1000 inch).
2. Dimension tolerance is
±
30
μ
.
3. All contact metallization is gold.
PART NO. HSMS-
-0006/-8002
75
(3)
250
(10)
275
(11)
150
(8)
Anode
-0005
55
(2)
250
(10)
250
(10)
150
(6)
Cathode
X
2
Description/Applications
These Schottky chips are de-
signed for hybrid applications at
DC through K-band frequencies.
The passivated planar construc-
tion of these Schottky chips
provides a wide temperature
range capability combined with
broad bandwidth performance.
A variety of chips are provided
which are optimized for various
analog and digital applications.
Typical applications of Schottky
chips are mixing, detecting,
switching, gating, sampling, and
wave shaping.
This series of Schottky diode
chips are specifically designed for
analog and digital hybrid appli-
cations requiring thermosonic or
thermocompression bonding
techniques. The large bonding pad
allows easy bonding. The top
metallization is a layer of gold
deposited on adhesive metal
layers for a tarnish-free surface
that allows either thermosonic or
thermocompression bonding
techniques. The bottom metalli-
zation is also gold, suitable for
epoxy or eutectic die attach
methods.
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