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參數(shù)資料
| 型號： | HSMS-8012 |
| 英文描述： | Schottky Barrier Chips for Hybrid Integrated Circuits(混合集成電路應(yīng)用的肖特基勢壘二極管) |
| 中文描述： | 肖特基芯片的混合集成電路（混合集成電路應(yīng)用的肖特基勢壘二極管） |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 36K |
| 代理商： | HSMS-8012 |
Assembly and Handling
Procedures for Schottky
Chips
1. Storage
Devices should be stored in a dry
nitrogen purged desiccator or
equivalent.
2. Cleaning
If required, surface contamination
may be removed with electronic
grade solvents such as freon (T.F.
or T.M.C.), acetone, deionized
water, and methanol used singu-
larly or in combinations. Typical
cleaning times per solvent are one
to three minutes. DI water and
methanol should be used (in that
order) in the final cleansing. Final
drying can be accomplished by
placing the cleaned dice on clean
filter paper and drying with an
infrared lamp for 5–10 minutes.
Acids such as hydrofluoric (HF),
nitric (HNO
3
) and hydrochloric
(HCl) must not be used.
The effects of cleaning methods/
solutions should be verified on
small samples prior to submitting
the entire lot.
Following cleaning, dice should
either be used in assembly
(typically within a few hours) or
stored in clean containers in an
inert atmosphere or a vacuum
chamber.
3. Die Attach
a. Eutectic
Eutectic die attach can be accom-
plished by “scrubbing” the die
with a preform on the header.
(Note—times and temperature
utilized vary depending on the
type of preform.) For example,
310
°
C is suitable for a Au/Sn
preform.
b. Epoxy
For epoxy die-attach, conducive
silver-filler epoxies are recom-
mended. This method can be used
for all Agilent Schottky chips.
4. Wire Bonding
Thermocompression wire bond-
ing is recommended. Suggested
wire is pure gold, 0.7 to 1.5 mil
diameter.
www.semiconductor.agilent.com
Data subject to change.
Copyright 1999 Agilent Technologies
5965-8855E (11/99)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HSMS-2700 | High Performance Schottky Diode for Transient Suppression(用于瞬變抑制的高性能肖特基二極管) |
| HSMS-2702 | High Performance Schottky Diode for Transient Suppression(用于瞬變抑制的高性能肖特基二極管) |
| HSMS--270B | High Performance Schottky Diode for Transient Suppression(用于瞬變抑制的高性能肖特基二極管) |
| HSMS--270C | High Performance Schottky Diode for Transient Suppression(用于瞬變抑制的高性能肖特基二極管) |
| HSMS-280B | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSMS-8101 | 制造商:Avago Technologies 功能描述:DIODE SCHOTTKY MIXER SOT-23 |
| HSMS-8101-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Surface Mount Microwave Schottky Mixer Diodes |
| HSMS-8101-BLKG | 功能描述:射頻混合器 4 VBR 0.26 pF RoHS:否 制造商:NXP Semiconductors 頻率范圍: 轉(zhuǎn)換損失——最大: 工作電源電壓:6 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| HSMS-8101SINGLE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Surface Mount Microwave Schottky Mixer Diodes (69K in pdf) |
| HSMS-8101-TR1 | 功能描述:DIODE SCHOTTKY MIXER 4V SOT23 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 二極管 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 二極管類型:PIN - 單 電壓 - 峰值反向(最大):50V 電流 - 最大:50mA 電容@ Vr, F:0.4pF @ 50V，1MHz 電阻@ Vr, F:4.5 歐姆 @ 10mA，100MHz 功率耗散（最大）:100mW 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:3-MCP 包裝:帶卷 (TR) |
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