參數(shù)資料
型號: HSMS-8012
英文描述: Schottky Barrier Chips for Hybrid Integrated Circuits(混合集成電路應用的肖特基勢壘二極管)
中文描述: 肖特基芯片的混合集成電路(混合集成電路應用的肖特基勢壘二極管)
文件頁數(shù): 2/4頁
文件大?。?/td> 36K
代理商: HSMS-8012
2
Absolute Maximum Ratings, T
A
= 25
°
C
Symbol
Parameter
Units
HSMS-8002
HSMS-0005
P
T
Total device dissipation, measured in an
infinite heatsink. Derate linearly to zero
at maximum rated temperature
Peak Inverse Voltage
Junction Temperature (maximum)
Storage Temp. Range
Operating Temperature
Note:
Operation in excess of any one of these conditions may result in permanent damage to the device.
mW
75
75
P
IV
TJ
T
STG
T
OP
V
°
C
°
C
°
C
4.0
150
2.0
200
–65 to 150
–65 to 150
–65 to 200
–65 to 200
DC Electrical Specifications at T
A
= 25
°
C
Schottky Barrier Chips for Microwave and RF Mixers
Nearest
Equivalent
Packaged
Part: HSMS-
8101
Minimum
Breakdown
Voltage
V
BR
(V)
4
I
R
= 10
μ
A I
F
= 1 mA
Maximum
Forward
Voltage
V
F
(mV)
250
Maximum
Forward
Voltage
V
F
(mV)
350
Maximum
Dynamic
Resistance
R
D
(
)
[2]
14
I
F
= 5 mA
Part
Number
HSMS-
8002
Test
Conditions
Batch
Matched
[1]
HSMS-
8012
V
F
= 15 mV
I
F
= 1 mA
Maximum
Capacitance
C
T
(pF)
0.16
V
= 0 V
f = 1.0 MHz
Notes:
1. Standard batch match size, 100 units.
2. To obtain R
S
, subtract 26/5 = 5.2
.
Typical
Typical
IF Impedance
Z
IF
(
)
150
Typical
Part Number
HSMS-
8002
Conversion Loss
L
C
(dB)
5.5
Typical SWR
Tangential Sensitivity
T
SS
(dBm)
-46
f = 10 GHz
BW = 2 MHz
I
BIAS
= 20
μ
A
1.2:1
Test
f = 16 GHz
DC load resistance = 0
, LO power = 1 mW
Conditions
RF Electrical Parameters at T
A
= 25
°
C
相關PDF資料
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