參數(shù)資料
型號： HUF75531SK8
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET
中文描述： 6 A, 80 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： PLASTIC, SO-8
文件頁數(shù)： 4/12頁
文件大?。?/td> 183K
代理商： HUF75531SK8
4
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
10
200
200
0.1
1
100
μ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED
T
A
= 25
o
C
SINGLE PULSE
100
R
θ
JA
= 50
o
C/W
1
100
200
0.01
0.1
1
100
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
1
10
10
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
100
0
25
30
2.0
3.0
4.0
6.0
I
D
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
5.0
5
10
15
20
5
15
25
30
0
0.5
1.0
1.5
2.0
0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
=5V
V
GS
= 20V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
A
= 25
C
V
GS
= 7V
V
GS
= 6V
20
10
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 6A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
HUF75531SK8
相關(guān)PDF資料
PDF描述
HUF75531SK8T 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET
HUF75531SK8 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF75531SK8T 功能描述:MOSFET 6a 80V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75542P3 功能描述:MOSFET 75a 80V N-Ch UltraFET 0.014 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75542P3 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 80V 75A TO220AB 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 80V, 75A, TO220AB 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 80V, 75A, TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:80V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; No. of Pins:3 ;RoHS Compliant: Yes
HUF75542P3 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR TYPE:MOSFET ((NW))
HUF75542P3_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
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