參數(shù)資料
型號(hào)： HUF75631P3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs
中文描述： 33 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 2/11頁(yè)
文件大?。?/td> 356K
代理商： HUF75631P3
2
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
100
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 95V, V
GS
= 0V
V
DS
= 90V, V
GS
= 0V, T
A
= 150
o
C
-
-
1
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
2
-
4
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 5.5A, V
GS
= 10V (Figure 9)
-
0.033
0.039
THERMAL SPECIFICATIONS
Thermal Resistance Junction to
Ambient
R
θ
JA
Pad Area = 0.76 in
2
(490.3 mm
2
) (Note 2)
(Figures 20, 21)
-
-
50
o
C/W
Pad Area = 0.054 in
2
(34.8 mm
2
) (Note 3)
(Figures 20, 21)
-
-
152
o
C/W
Pad Area = 0.0115 in
2
(7.42 mm
2
)(Note 4)
(Figures 20, 21)
-
-
189
o
C/W
SWITCHING SPECIFICATIONS
Turn-On Time
t
ON
V
DD
= 50V, I
D
= 5.5A
V
GS
=
10V, R
GS
= 6.8
(Figures 18, 19)
-
-
50
ns
Turn-On Delay Time
t
d(ON)
-
11
-
ns
Rise Time
t
r
-
23
-
ns
Turn-Off Delay Time
t
d(OFF)
-
39
-
ns
Fall Time
t
f
-
31
-
ns
Turn-Off Time
t
OFF
-
-
105
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
DD
= 50V, I
D
= 5.5A,
I
g(REF)
= 1.0mA
(Figures 13, 16, 17)
-
66
79
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0V to 10V
-
35
43
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
2.4
2.9
nC
Gate to Source Gate Charge
Q
gs
-
4.75
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
12
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 12)
-
1225
-
pF
Output Capacitance
C
OSS
-
330
-
pF
Reverse Transfer Capacitance
C
RSS
-
105
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 5.5 A
-
-
1.25
V
I
SD
= 2.5 A
-
-
1.00
V
Reverse Recovery Time
t
rr
I
SD
= 5.5 A, dI
SD
/dt = 100A/
μ
s
-
-
96
ns
Reverse Recovered Charge
Q
RR
I
SD
= 5.5 A, dI
SD
/dt = 100A/
μ
s
-
-
310
nC
HUF75631SK8
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