參數(shù)資料
型號： HUF75831SK8T
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET
中文描述： 3 A, 150 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： MS-012AA, 8 PIN
文件頁數(shù)： 9/12頁
文件大?。?/td> 182K
代理商： HUF75831SK8T
9
SABER Electrical Model
REV 4 feb 2000
template huf75831sk8 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (is = 9.95e-13, rs=6.61e-3, trs1=1.02e-4, trs2=0, cjo = 1.53e-9, tt = 2.12e-7, m = 0.62)
dp..model dbreakmod = (rs=9.00e-1, trs1=9.94e-4, trs2=1.06e-7)
dp..model dplcapmod = (cjo = 1.35e-9, is = 1e-30, m = 0.90)
m..model mmedmod = (type=_n, vto = 3.18, kp = 1.70, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 3.56, kp = 30, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 2.85, kp = 0.08, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -6.0, voff = -4.0)
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -.4.0, voff = -6.0)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -3.0, voff = 0.0)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.0, voff = -3.0)
c.ca n12 n8 = 2.00e-9
c.cb n15 n14 = 2.00e-9
c.cin n6 n8 = 1.10e-9
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 1.00e-9
l.lgate n1 n9 = 1.12e-9
l.lsource n3 n7 = 1.29e-10
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1 = 9.97e-4, tc2 = 5.07e-7
res.rdrain n50 n16 = 5.80e-2, tc1 = 8.52e-3, tc2 = 2.44e-5
res.rgate n9 n20 = 1.95
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 11.2
res.rlsource n3 n7 = 1.29
res.rslc1 n5 n51 = 1e-6, tc1 = 3.28e-3, tc2 = 0
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 2.20e-3, tc1 = 1.00e-3, tc2 = 0
res.rvtemp n18 n19 = 1, tc1 = -3.08e-3, tc2 = 0
res.rvthres n22 n8 = 1, tc1 = -2.08e-3, tc2 = -8.86e-6
spe.ebreak n11 n7 n17 n18 = 155.4
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/40))** 2))
}
}
18
22
+
-
6
8
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
19
VBAT
RVTHRES
IT
17
18
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ISCL
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
HUF75831SK8
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參數(shù)描述
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HUF75842S3 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75842S3S 功能描述:MOSFET 43a 150V 0.042 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75842S3ST 功能描述:MOSFET 43a 150V 0.042 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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