參數(shù)資料
型號： HUF76131SK8
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
中文描述： 10 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： MS-012AA, 8 PIN
文件頁數(shù)： 3/10頁
文件大?。?/td> 197K
代理商： HUF76131SK8
3
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
8
4
0
25
50
75
100
125
150
6
10
I
D
,
T
A
, AMBIENT TEMPERATURE (
o
C)
12
2
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-1
10
0
10
0.01
1
10
-2
Z
θ
J
,
T
0.001
10
-4
10
-3
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
P
DM
t
1
t
2
10
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
0.1
10
2
10
3
T
J
= MAX RATED
T
A
= 25
C
100
μ
s
10ms
1ms
V
DSS(MAX)
= 30V
10
100
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
100
500
10
I
D
,
LIMITED BY r
DS(ON)
AREA MAY BE
V
GS
= 5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I
D
,
1000
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, PULSE WIDTH (s)
T
A
= 25
o
C
I = I
25
150 - T
A
125
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
100
10
HUF76131SK8
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76131SK8T 功能描述:MOSFET USE 512-FDS6690A 1Ch HS Logic Gate RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76131SK8T_NB82084 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF76132P3 功能描述:MOSFET 75a 30V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76132S3 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF76132S3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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