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參數(shù)資料
| 型號(hào)： | HUF76131SK8 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| 中文描述： | 10 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | MS-012AA, 8 PIN |
| 文件頁(yè)數(shù)： | 7/10頁(yè) |
| 文件大?。?/td> | 197K |
| 代理商： | HUF76131SK8 |
7
Thermal Resistance vs Mounting Pad Area
The maximum rated junction temperature T
JMAX
constrains
the maximum allowable device power dissipation P
Dmax
in
an application. The application ambient temperature T
A
(
o
C)
and thermal impedance Z
θ
JA
(
o
C/W) must be reviewed to
ensure that T
JMAX
(
o
C) is never exceeded. Equation 1
mathematically represents the relationship.
Intersil provides thermal information to assist the designer’s
preliminary application evaluation. Precise determination of
P
DMAX
is complex and influenced by many factors:
1. PC heat sink area and location (top and bottom), copper
leads and mounting pad area.
2. Air Flow, board orientation and type.
3. Power pulse width and duty factor.
Figure 22 addresses these points by depicting R
θ
JA
values
vs. top copper (component side) heat sink area. The
measurements were performed in still air using a horizontally
positioned FR-4 board with 1oz copper after 1000 seconds
of steady state power.
Figure 22 also displays the two R
θ
JA
values listed in the
Electrical Specifications table. The two points were chosen
to graphically depict the compromise between copper board
area, thermal resistance and ultimately power dissipation.
Thermal resistance values corresponding to other
component side copper areas can be obtained from Figure
22 or by calculation using Equation 2. Area in Equation 2 is
the top copper area including the gate and source pads.
Figure 22 provides the necessary information for steady
state junction temperature or power dissipation calculations.
Transient pulse applications are best studied using the
Intersil device SPICE thermal model.
(EQ. 1)
PDMAX
θ
JA
–
(
---------------------------------------
)
=
(EQ. 2)
R
θ
JA
79.3
21.8
Area
(
)
ln
×
–
=
R
θ
J
(
o
C
50
100
150
200
AREA, TOP COPPER AREA (in
2
)
0.01
0.1
1.0
R
θ
JA
= 79.3 - 21.8
*
ln(AREA)
143.4
o
C/W - 0.054in
2
177.3
o
C/W - 0.0115in
2
IGURE 22. THERMAL RESISTANCE vs MOUNTING PAD AREA
0.001
250
HUF76131SK8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76131SK8T | 功能描述:MOSFET USE 512-FDS6690A 1Ch HS Logic Gate RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76131SK8T_NB82084 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF76132P3 | 功能描述:MOSFET 75a 30V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76132S3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HUF76132S3S | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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