參數(shù)資料
型號： HUF76131SK8
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
中文描述： 10 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： MS-012AA, 8 PIN
文件頁數(shù)： 8/10頁
文件大小： 197K
代理商： HUF76131SK8
8
PSPICE Electrical Model
SUBCKT HUF76131 2 1 3 ;
rev 12/31/97
CA 12 8 2.22-9
CB 15 14 2.13e-9
CIN 6 8 1.52e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 37.4
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 1.04e-9
LSOURCE 3 7 1.29e-10
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1.94e-3
RGATE 9 20 2.20
RLDRAIN 2 5 10
RLGATE 1 9 10.4
RLSOURCE 3 7 1.29
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 8.75e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*275),3))}
.MODEL DBODYMOD D (IS = 2.25e-12 RS = 6.05e-3 IKF=16.00 TRS1 = 1.14e-4 TRS2 = 1.23e-6 CJO = 2.35e-9 TT = 2.71e-8 M = 0.44)
.MODEL DBREAKMOD D (RS = 1.05e-1 TRS1 = 1.01e-4 TRS2 = 1.11e-7)
.MODEL DPLCAPMOD D (CJO = 1.08e-9 IS = 1e-30 N = 10 M = 0.69)
.MODEL MMEDMOD NMOS (VTO = 1.89 KP = 5.05 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.20)
.MODEL MSTROMOD NMOS (VTO = 2.22 KP = 125.00 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.62 KP = 0.10 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 22.0 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 9.54e-4 TC2 = 1.07e-7)
.MODEL RDRAINMOD RES (TC1 = 1.61e-2 TC2 = 5.17e-5)
.MODEL RSLCMOD RES (TC1 = 1.03e-5 TC2 = 7.67e-7)
.MODEL RSOURCEMOD RES (TC1 = 0 TC2 = 0)
.MODEL RVTHRESMOD RES (TC = -2.81e-3 TC2 = -8.75e-6)
.MODEL RVTEMPMOD RES (TC1 = -6.68e-4 TC2 = 8.80e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.80 VOFF= -1.50)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.50 VOFF= -5.80)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.50 VOFF= -0.00)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.00 VOFF= -0.50)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
HUF76131SK8
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76131SK8T 功能描述:MOSFET USE 512-FDS6690A 1Ch HS Logic Gate RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76131SK8T_NB82084 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF76132P3 功能描述:MOSFET 75a 30V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76132S3 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF76132S3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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