參數(shù)資料
型號(hào)： HUF76443P3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 3-V to 5.5-V Dual RS-232 Port 48-SSOP -40 to 85
中文描述： 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 336K
代理商： HUF76443P3
2
HUF76443P3, HUF76443S3S
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 12)
I
D
= 250
μ
A, V
GS
= 0V , T
C
= -40
o
C (Figure 12)
V
DS
= 55V, V
GS
= 0V
V
DS
= 50V, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±
16V
60
-
-
V
55
-
-
V
Zero Gate Voltage Drain Current
I
DSS
-
-
1
μ
A
μ
A
nA
-
-
250
Gate to Source Leakage Current
I
GSS
-
-
±
100
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 11)
I
D
= 75A, V
GS
= 10V (Figures 9, 10)
I
D
= 75A, V
GS
= 5V (Figure 9)
I
D
= 75A, V
GS
= 4.5V (Figure 9)
1
-
3
V
Drain to Source On Resistance
-
0.0067
0.008
-
0.0079
0.0095
-
0.0083
0.010
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
TO-220 and TO-263
-
-
0.57
o
C/W
o
C/W
Thermal Resistance Junction to
Ambient
-
-
62
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 30V, I
D
= 75A
V
GS
=
4.5V, R
GS
= 2.7
(Figures 15, 21, 22)
-
-
380
ns
Turn-On Delay Time
-
18
-
ns
Rise Time
-
235
-
ns
Turn-Off Delay Time
-
47
-
ns
Fall Time
-
116
-
ns
Turn-Off Time
-
-
245
ns
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 30V, I
D
= 75A
V
GS
=
10V,
R
GS
= 2.7
(Figures 16, 21, 22)
-
-
90
ns
Turn-On Delay Time
-
12
-
ns
Rise Time
-
48
-
ns
Turn-Off Delay Time
-
65
-
ns
Fall Time
-
117
-
ns
Turn-Off Time
-
-
275
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 30V,
I
D
= 75A,
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
-
107
129
nC
Gate Charge at 5V
-
59
71
nC
Threshold Gate Charge
-
4.1
4.9
nC
Gate to Source Gate Charge
-
12
-
nC
Gate to Drain “Miller” Charge
-
27
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
4115
-
pF
Output Capacitance
-
1185
-
pF
Reverse Transfer Capacitance
-
215
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 75A
I
SD
= 37.5A
I
SD
= 75A, dI
SD
/dt = 100A/
μ
s
I
SD
= 75A, dI
SD
/dt = 100A/
μ
s
-
-
1.25
V
-
-
1.0
V
Reverse Recovery Time
t
rr
-
-
107
ns
Reverse Recovered Charge
Q
RR
-
-
275
nC
相關(guān)PDF資料
PDF描述
HUF76633P3 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76633P3T TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 38A I(D) | TO-220AB
HUF76633S3S 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(38A, 100V, 0.036Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管)
HUF76633S3S 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76633P3 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76443S3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76443S3ST 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76444P3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | TO-220AB
HUF76444S3S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | TO-263AB
HUF76445P3 功能描述:MOSFET 75a 60V 0.0075 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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