參數(shù)資料
型號(hào): HUF76443P3
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): 功率晶體管
英文描述: 3-V to 5.5-V Dual RS-232 Port 48-SSOP -40 to 85
中文描述: 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 7/9頁(yè)
文件大小: 336K
代理商: HUF76443P3
7
HUF76443P3, HUF76443S3S
PSPICE Electrical Model
.SUBCKT HUF76443 2 1 3 ;
rev 26 August 1999
CA 12 8 5.50e-9
CB 15 14 5.50e-9
CIN 6 8 3.90e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 66.05
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.00e-9
LGATE 1 9 5 4.92e-9
LSOURCE 3 7 2.39e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 2.80e-3
RGATE 9 20 0.84
RLDRAIN 2 5 10
RLGATE 1 9 49.2
RLSOURCE 3 7 23.9
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 3.20e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*475),3))}
.MODEL DBODYMOD D (IS = 3.16e-12 RS = 2.54e-3 TRS1 = 2.21e-3 TRS2 = 0 CJO = 4.95e-9 TT = 6.81e-8 M = 0.50)
.MODEL DBREAKMOD D (RS = 1.41e-1 TRS1 = 1.09e-4 TRS2 = 0)
.MODEL DPLCAPMOD D (CJO = 3.47e-9 IS = 1e-30 M = 0.85)
.MODEL MMEDMOD NMOS (VTO = 1.90 KP = 5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.84)
.MODEL MSTROMOD NMOS (VTO = 2.31 KP = 195 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.68 KP = 0.12 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 8.4 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.14e-3 TC2 = 0)
.MODEL RDRAINMOD RES (TC1 = 9.91e-3 TC2 = 2.75e-5)
.MODEL RSLCMOD RES (TC1 = 1.01e-3 TC2 = 3.23e-5)
.MODEL RSOURCEMOD RES (TC1 = 1.00e-3 TC2 =0)
.MODEL RVTHRESMOD RES (TC1 = -2.59e-3 TC2 = -8.95e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.56e-3 TC2 = 0)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.00 VOFF= -3.00)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.00 VOFF= -5.00)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.50 VOFF= 0.0)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.0 VOFF= -0.50)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
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