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參數(shù)資料
| 型號(hào)： | HUF76443P3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3-V to 5.5-V Dual RS-232 Port 48-SSOP -40 to 85 |
| 中文描述： | 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 336K |
| 代理商： | HUF76443P3 |
5
HUF76443P3, HUF76443S3S
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
0.4
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
0.9
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
100
1000
10000
0.1
1
10
60
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
2
4
6
8
10
0
25
50
75
100
125
0
V
G
,
V
DD
= 30V
Q
g
, GATE CHARGE (nC)
I
D
= 75A
I
D
= 40A
I
D
= 20A
WAVEFORMS IN
DESCENDING ORDER:
100
200
400
500
600
700
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 30V, I
D
= 75A
t
r
t
f
t
d(ON)
t
d(OFF)
300
200
400
600
800
1000
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 30V, I
D
= 75A
t
d(OFF)
t
r
t
d(ON)
t
f
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF76633P3 | 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76633P3T | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 38A I(D) | TO-220AB |
| HUF76633S3S | 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(38A, 100V, 0.036Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
| HUF76633S3S | 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76633P3 | 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76443S3S | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76443S3ST | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76444P3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | TO-220AB |
| HUF76444S3S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | TO-263AB |
| HUF76445P3 | 功能描述:MOSFET 75a 60V 0.0075 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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