- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385414 > HY27SS08121M (Hynix Semiconductor Inc.) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash PDF資料下載
參數(shù)資料
| 型號： | HY27SS08121M |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| 中文描述： | 512兆（64Mx8bit / 32Mx16bit）NAND閃存 |
| 文件頁數(shù)： | 11/43頁 |
| 文件大?。?/td> | 729K |
| 代理商： | HY27SS08121M |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁當(dāng)前第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁
Rev 0.6 / Oct. 2004
11
HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Table 2. Bus Operation
Note : (1) Only for x16 devices.
(2) WP must be V
IH
when issuing a program or erase command.
Table 3: Address Insertion, x8 Devices
Note: (1). A8 is set Low or High by the 00h or 01h Command, see Pointer Operations section.
(2). Any address input cycles will be ignored with tALS > 0ns.
Table4: Address Insertion, x16 Devices
Note: (1). A8 is Don
'
t Care in x16 devices.
(2). Any address input cycles will be ignored with tALS > 0ns.
(3). A1 is the Least Significant Address for x16 devices.
(4). The 01h Command is not used in x16 devices.
BUS Operation
CE
ALE
CLE
RE
WE
WP
I/O
0
- I/O
7
I/O
8
- I/O
15(1)
Command Input
V
IL
V
IL
V
IH
V
IH
Rising
X
(2)
Command
X
Address Input
V
IL
V
IH
V
IL
V
IH
Rising
X
Address
X
Data Input
V
IL
V
IL
V
IL
V
IH
Rising
X
Data Input
Data Input
Data Output
V
IL
V
IL
V
IL
Falling
V
IH
X
Data Output
Data Output
Write Protect
X
X
X
X
X
V
IL
X
X
Standby
V
IH
X
X
X
X
X
X
X
Bus Cycle
I/O
7
A7
I/O
6
A6
I/O
5
A5
I/O
4
A4
I/O
3
A3
I/O
2
A2
I/O
1
A1
I/O
0
A0
1st Cycle
2nd Cycle
A16
A15
A14
A13
A12
A11
A10
A9
3rd Cycle
A24
A23
A22
A21
A20
A19
A18
A17
4th Cycle
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
A25
Bus Cycle
I/O
8
-I/
O
15
X
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
I/O
2
I/O
1
I/O
0
1st Cycle
A7
A6
A5
A4
A3
A2
A1
A0
2nd Cycle
X
A16
A15
A14
A13
A12
A11
A10
A9
3rd Cycle
X
A24
A23
A22
A21
A20
A19
A18
A17
4th Cycle
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
A25
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY27SS16121M | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27US08121M | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27USxxx | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27US16121M | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY29F002TC-70 | 2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY27SS08561A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27SS08561M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27SS16121A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27SS16121M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27SS16561A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。