參數(shù)資料
型號: HY27SS08121M
廠商: Hynix Semiconductor Inc.
英文描述: 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
中文描述: 512兆(64Mx8bit / 32Mx16bit)NAND閃存
文件頁數(shù): 24/43頁
文件大?。?/td> 729K
代理商: HY27SS08121M
Rev 0.6 / Oct. 2004
24
HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Table 8: Valid Block
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of Program/ Erase cycles per block are shown in Table 9.
Symbol
Para.
Min
Max
Unit
N
VB
# of Valid Block
4016
4096
Blocks
Figure 20. Bad Block Management Flowchart
START
Block Address=
Block 0
Data
=FFh
Last
block
END
Update
Bad Block table
Increment
Block Address
YES
NO
YES
NO
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