參數(shù)資料
型號: HY27SS16561M
廠商: Hynix Semiconductor Inc.
英文描述: 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
中文描述: 片256Mbit(32Mx8bit / 16Mx16bit)NAND閃存
文件頁數(shù): 16/44頁
文件大?。?/td> 733K
代理商: HY27SS16561M
Rev 0.7 / Oct. 2004
16
HY27SS(08/16)561M Series
HY27US(08/16)561M Series
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
Figure 12. Sequential Row Read Operation
Figure 13. Sequential Row Read Block Diagrams
Busy
Busy
Busy
tBLBH1
(Read Busy time)
tBLBH1
tBLBH1
Address Inputs
I/O
00h/
01h/50h
1st
Page Output
2nd
Page Output
Nth
Page Output
Command
Code
RB
Read A Command, x8 Devices
Block
Read A Command, x16 Devices
Read B Command, x8 Devices
Read C Command, x8/x16 Devices
Area A
(1st half Page)
Area C
(Spare)
Area B
(2nd half
Page)
Area A
(1st half Page)
Area B
(2nd half
Page)
Area C
(Spare)
Area C
(50h)
Area A
(main area)
Area A
Area C
(Spare)
Area A/B
1st Page
2nd Page
Nth Page
Block
Block
Block
1st Page
2nd Page
Nth Page
1st Page
2nd Page
Nth Page
1st Page
2nd Page
Nth Page
Note : GND input=L, 00h Command
Note : GND input=L, 01h Command
Note : GND input=L, 00h Command
Note : GND input=L, 50h Command
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相關(guān)代理商/技術(shù)參數(shù)
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