參數(shù)資料
型號(hào)： HY27SS16561M
廠商： Hynix Semiconductor Inc.
英文描述： 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
中文描述： 片256Mbit（32Mx8bit / 16Mx16bit）NAND閃存
文件頁數(shù)： 25/44頁
文件大?。?/td> 733K
代理商： HY27SS16561M
Rev 0.7 / Oct. 2004
25
HY27SS(08/16)561M Series
HY27US(08/16)561M Series
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
Table 9: Program, Erase Time and Program Erase Endurance Cycles
MAXIMUM RATING
Stressing the device above the ratings listed in Table 10, Absolute Maximum Ratings, may cause permanent damage to
the device. These are stress ratings only and operation of the device at these or any other conditions above those indi-
cated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions
for extended periods may affect device reliability.
Table 10: Absolution Maximum Rating
Note: (1). Minimum Voltage may undershoot to -2V for less than 20ns during transitions on input and I/O pins. Maximum voltage
may overshoot to V
CC
+ 2V for less than 20ns during transitions on I/O pins.
DC AND AC PARAMETERS
This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device.
The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the Mea-
surement Conditions summarized in Table 11, Operating and AC Measurement Conditions. Designers should check that
the operating conditions in their circuit match the measurement conditions when relying on the quoted parameters.
Parameters
NAND Flash
Unit
Min
Typ
Max
Page Program Time
200
500
us
Block Erase Time
2
3
ms
Program/Erase Cycles (per block)
100,000
cycles
Data Retention
10
years
Symbol
Parameter
NAND Flash
Unit
Min
Max
T
BIAS
Temperature Under Bias
-50
125
o
C
T
STG
Storage Temperature
-65
150
o
C
V
IO(1)
Input or Output Voltage
1.8V devices
-0.6
2.7
V
3.3 V devices
-0.6
4.6
V
V
CC
Supply Voltage
1.8V devices
-0.6
2.7
V
3.3 V devices
-0.6
4.6
V
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