參數(shù)資料
型號(hào): HY27US16121M
廠商: Hynix Semiconductor Inc.
英文描述: 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
中文描述: 512兆(64Mx8bit / 32Mx16bit)NAND閃存
文件頁(yè)數(shù): 6/43頁(yè)
文件大?。?/td> 729K
代理商: HY27US16121M
Rev 0.6 / Oct. 2004
6
HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Figure 5. 63-FBGA Contactions, x8 Device (Top view through package)
Figure 6. 63-FBGA Contactions, x16 Device (Top view through package)
6
5
4
3
2
1
A
B
C
D
E
F
G
H
ALE
VSS
CE
WE
RB
NC
RE
CLE
NC
NC
NC
NC
NC
NC
NC
NC
NC
WP
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
I/O0
NC
NC
NC
VCC
NC
I/O1
NC
VCC
I/O5
I/O7
VSS
I/O2
I/O3
I/O4
I/O6
VSS
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
10
9
8
7
J
K
L
M
6
5
4
3
2
1
A
B
C
D
E
F
G
H
ALE
VSS
CE
WE
RB
NC
RE
CLE
NC
NC
NC
NC
NC
NC
NC
NC
NC
WP
NC
NC
NC
NC
NC
NC
NC
NC
NC
I/O5
NC
I/O1
VCC
VCC
I/O6
I/O15
VSS
I/O2
I/O11
I/O4
I/O13
VSS
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
10
9
8
7
J
K
L
M
I/O7
I/O8
I/O10
I/O12
I/O14
I/O0
I/O9
I/O3
相關(guān)PDF資料
PDF描述
HY29F002TC-70 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
HY29F002TC-45 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
HY29F002TC-55 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
HY29F002T 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
HY29F002TC-90 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY27US16122B 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27US161G1M 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
HY27US16281A 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory
HY27US16282A 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory
HY27US16561A 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mbit (32Mx8bit / 16Mx16bit) NAND Flash