- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385414 > HY29F040A (Hynix Semiconductor Inc.) 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory PDF資料下載
參數(shù)資料
| 型號： | HY29F040A |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory |
| 中文描述： | 為512k × 8位CMOS 5.0伏只，扇區(qū)擦除閃存 |
| 文件頁數(shù)： | 11/40頁 |
| 文件大?。?/td> | 282K |
| 代理商： | HY29F040A |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁當前第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁
11
HY29F040A
DQ7
/Data Polling
The HY29F040A device features /Data Polling as
a method to indicate to the host the status of the
Byte Programming, Chip Erase, and Sector Erase
operations. When the Byte Programming opera-
tion is in progress, an attempt to read the device
will produce the compliment of the data last writ-
ten to DQ7. Upon completion of the Byte Program-
ming operation, an attempt to read the device will
produce the true data last written to DQ7. When
the Chip Erase or Sector Erase operation is in
progress, an attempt to read the device will produce
a logical “0” at the DQ7 output. Upon completion of
the Chip Erase or Sector Erase operation, an at-
tempt to read the device will produce a logical ”1" at
the DQ7 output. The flowchart for /Data Polling (DQ7)
is shown in Figure 3.
For Chip Erase, the /Data Polling is valid after the
rising edge of the sixth /WE pulse in the six write
pulse sequence. For Sector Erase, the /Data Poll-
ing is valid after the last rising edge of the sector
erase /WE pulse. For both Chip Erase and Sec-
tor Erase, /Data Polling must be performed at sec-
tor address within any of the sectors being erased
and not a protected sector. Otherwise, the /Data
Polling status may not be valid. Once the Internal
Algorithm operation is close to being completed,
the HY29F040A data pins (DQ7) may change asyn-
chronously while the output enable (/OE) is as-
serted low. This means that the device is driving sta-
tus information on DQ7 at one instant of time and
valid data at the next instant of time. Depending on
when the system samples the DQ7 output, it may
read the status or valid data. Even if the device has
completed the Internal Algorithm operation and DQ7
has a valid data, data outputs on DQ0-DQ6 may be
still invalid. Valid data on DQ0-DQ7 will be read on
successive read attempts.
The Data Polling feature is only active during the
Byte Programming operation, Chip Erase
operation, Sector Erase Operation, or sector
erase time-out window (see Table 5).
DQ6
Toggle Bit
The HY29F040A also features the “Toggle Bit”
as a method to indicate to the host system the
status of the Internal Programming and Erase
Algorithms. The flowchart for Toggle Bit (DQ6) is
shown in Figure 4.
During an Internal Programming or Erase Algorithm
cycle, successive attempts to read (/OE toggling)
data from the device will result in DQ6 toggling
between one and zero. Once the Internal Pro-
gramming or Erase operation is completed, DQ6
will stop toggling and valid data will be read on the
WRITE OPERATION STATUS
Notes
:
1. DQ0, DQ1, DQ2, DQ4 are reserve pins for future use.
Table 5. Write Operation Status Flags
(1)
Status
Byte Programming Operation
Chip or Sector Erase Operation
Erase Suspend Erase Suspended Sector
DQ7
/DQ7
0
1
DQ6
Toggle
Toggle
No Toggle
DQ5
0
0
0
DQ3
0
1
N/A
In Progress
Mode Non-Erase Suspended Sector
Data
Data
Data
Data
Exceeded
Byte Programming Operation
/DQ7
Toggle
1
0
Time Limits
Chip or Sector Erase Operation
0
Toggle
1
1
Program in Erase Suspend Mode
/DQ7
Toggle
1
1
相關PDF資料 |
PDF描述 |
|---|---|
| HY29F080T70 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080G12 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080G70 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080G90 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HY29F040AC-12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory |
| HY29F040AC-12E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory |
| HY29F040AC-12I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory |
| HY29F040AC-15 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory |
| HY29F040AC-15E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復。