參數(shù)資料
型號: HY29LV160BT-12
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
中文描述: 1M X 16 FLASH 2.7V PROM, 120 ns, PDSO48
封裝: TSOP-48
文件頁數(shù): 21/48頁
文件大?。?/td> 517K
代理商: HY29LV160BT-12
21
Rev. 1.2/May 01
HY29LV160
When the system detects that DQ[7] has changed
from the complement to true data (or
0
to
1
for
erase), it should do an additional read cycle to read
valid data from DQ[7:0]. This is because DQ[7]
may change asynchronously with respect to the
other data bits while Output Enable (OE#) is as-
serted low.
Figure 7 illustrates the Data# Polling test algorithm.
DQ[6] - Toggle Bit I
Toggle Bit I on DQ[6] indicates whether an Auto-
matic Program or Erase algorithm is in progress
or complete, or whether the device has entered
the Erase Suspend mode. Toggle Bit I may be
read at any address, and is valid after the rising
edge of the final WE# pulse in the Program or
Erase command sequence, including during the
sector erase time-out. The system may use ei-
ther OE# or CE# to control the read cycles.
Successive read cycles at any address during an
Automatic Program algorithm operation (including
programming while in Erase Suspend mode)
cause DQ[6] to toggle. DQ[6] stops toggling when
the operation is complete. If a program address
falls within a protected sector, DQ[6] toggles for
approximately 1 μs after the program command
sequence is written, then returns to reading array
data.
Table 11. Write and Erase Operation Status Summary
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Notes:
1. A valid address is required when reading status information. See text for additional information.
2. DQ[5] status switches to a
1
when a program or erase operation exceeds the maximum timing limit.
3. A
1
during sector erase indicates that the 50 μs time-out has expired and active erasure is in progress. DQ[3] is not
applicable to the chip erase operation.
4. Equivalent to
No Toggle
because data is obtained in this state.
5. Data (DQ[7:0]) = 0xFF immediately after erasure.
6. Programming can be done only in a non-suspended sector (a sector not specified for erasure).
n
]
[
#
Q
D
a
D
0
a
D
Q
D
1
]
[
e
g
o
T
a
D
e
g
o
T
a
D
Q
D
]
[
Q
D
1
a
D
1
a
D
]
[
A
Q
N
a
D
1
3
a
D
D
]
[
A
/
a
D
e
g
o
T
a
D
Q
N
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1
#
Y
B
0
1
0
1
/
Y
R
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m
r
N
s
s
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e
2
/
4
2
5
4
4
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s
E
u
d
S
d
e
d
n
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p
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u
1
e
g
o
o
N
0
A
/
N
e
g
o
T
1
e
s
a
D
a
D
a
D
a
D
a
D
1
s
s
d
e
6
#
Q
D
a
D
e
g
o
T
a
D
1
a
D
2
A
/
N
a
D
A
/
N
a
D
0
1
6
4
START
Read DQ[7:0]
at Valid Address (Note 1)
DQ[7] = Data
NO
YES
PROGRAM/ERASE
COMPLETE
DQ[5] = 1
NO
YES
Test for DQ[7] = 1
for Erase Operation
Read DQ[7:0]
at Valid Address (Note 1)
DQ[7] = Data
(Note 2)
NO
YES
Test for DQ[7] = 1
for Erase Operation
PROGRAM/ERASE
EXCEEDED TIME ERROR
Notes:
1. During
programming
, the program address. During
sector erase
, an
address within any non-protected sector specified for erasure. During
chip erase
, an address within any non-protected sector.
2. Recheck DQ[7] since it may change asynchronously to DQ[5].
Figure 7. Data# Polling Test Algorithm
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