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參數(shù)資料
| 型號： | HY29LV160BT-12 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| 中文描述： | 1M X 16 FLASH 2.7V PROM, 120 ns, PDSO48 |
| 封裝： | TSOP-48 |
| 文件頁數(shù)： | 42/48頁 |
| 文件大?。?/td> | 517K |
| 代理商： | HY29LV160BT-12 |
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42
Rev. 1.2/May 01
HY29LV160
SECTOR PROTECTION/UNPROTECTION
USING PROGRAMMING EQUIPMENT
In addition to in-situ sector protection/unprotec-
tion, described in the Bus Operations section, the
HY29LV160 is capable of performing the same
functions using programming equipment. This
appendix describes the procedures and provides
specifications for these functions.
Sector Protect
The hardware sector protection feature disables
both program and erase operations in any sector
or combination of sectors.
The method intended for programming equipment
requires a high voltage (V
ID
) on address pin A[9]
and the OE# pin. The flow chart in Figure A1 il-
lustrates the algorithm, and timing specifications
and waveforms are provided at the end of this sec-
tion. When implementing the algorithm, note that
V
CC
must be applied to the device before applying
V
ID
, and V
ID
should be removed before removing
V
CC
from the device.
Programming of the protection circuitry begins on
the falling edge of WE# and is terminated on the
APPENDIX
rising edge of the same pulse. Verification of pro-
tection is done as described in the Electronic ID
Mode section and shown in the flow chart.
The HY29LV160 is shipped with all sectors un-
protected.
Sector Unprotect
The hardware sector unprotection feature re-en-
ables both program and erase operations in pre-
viously protected sectors. Note that to unprotect
any sector, all unprotected sectors must first be
protected prior to the first sector unprotect write
cycle.
The method intended for programming equipment
requires a high voltage (V
ID
) on address pin A[9]
and the OE# pin. The flow chart in Figure A2 illus-
trates the algorithm, and timing specifications and
waveforms are given at the end of this section.
When implementing the algorithm, note that V
CC
must be applied to the device before applying V
ID
,
and V
ID
should be removed before removing V
CC
from the device.
DC CHARACTERISTICS
Sector Protection and Unprotection Using Programming Equipment
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:
[
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L
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H
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Sector Protection and Unprotection Verification Using Programming Equipment
1
Notes:
1. L = V
IL
, H = V
IH
.
相關PDF資料 |
PDF描述 |
|---|---|
| HY29LV160TF-12 | Circular Connector; No. of Contacts:55; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:22-55 |
| HY29LV160TF-12I | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160TT-12 | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160TT-12I | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HY29LV160BT-12I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160BT-70 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160BT-70I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160BT-80 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160BT-80I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
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