參數(shù)資料
型號: HY29LV160BT-12
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
中文描述: 1M X 16 FLASH 2.7V PROM, 120 ns, PDSO48
封裝: TSOP-48
文件頁數(shù): 43/48頁
文件大小: 517K
代理商: HY29LV160BT-12
43
Rev. 1.2/May 01
HY29LV160
START
Set TRYCNT = 1
A9 = OE# = V
ID
Set Address:
A[19:12] = Sector to Protect
CE# = A[6] = A]0] = V
RESET# = A[1] = V
IL
IH
Wait 4 us
WE# = V
IL
Wait 150 us
A[9] = V
A[19:12] = Sector to Protect
OE# = CE# = V
A[6] = A[0] = V
WE# = RESET# = A[1] = V
IL
IH
Read Data
Data = 0x01
Protect Another
Sector
YES
TRYCNT = 25
NO
Increment TRYCNT
NO
YES
DEVICE FAILURE
YES
NO
Remove V
ID
from A[9]
Write Reset Command
SECTOR PROTECT
COMPLETE
APPLY V
CC
Wait 4 us
Figure A1. Sector Protection Using Programming Equipment
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AC CHARACTERISTICS
Sector Protection and Unprotection Using Programming Equipment
Notes:
1. Not 100% tested.
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