參數(shù)資料
型號(hào): HY57V161610DTC-6I
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 2 Banks x 512K x 16 Bit Synchronous DRAM
中文描述: 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
封裝: 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
文件頁(yè)數(shù): 10/11頁(yè)
文件大?。?/td> 574K
代理商: HY57V161610DTC-6I
HY57V161610D-I
Rev. 0.3/Mar. 02
10
COMMAND TRUTH TABLE
Note :
1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high.
2. X=Do not care, L=Low, H=High, BA=Bank Address, RA= Row Address, CA=Column Address, Opcode=Operand Code,
NOP=No Operation.
Command
CKEn-1
CKEn
CS
RAS
CAS
WE
DQM
A
0
~A
9
A10/
AP
BA
Note
Mode Register Set
H
X
L
L
L
L
X
OP code
No Operation
H
X
H
X
X
X
X
X
L
H
H
H
Bank Active
H
X
L
L
H
H
X
Row Address
V
Read
H
X
L
H
L
H
X
Column
Address
L
V
Read with Auto precharge
H
Write
H
X
L
H
L
L
X
Column
Address
L
V
Write with Auto precharge
H
Precharge All Bank
H
X
L
L
H
L
X
X
H
X
Precharge selected Bank
L
V
Burst Stop
H
X
L
H
H
L
X
X
U/LDQM
H
X
V
X
Auto Refresh
H
H
L
L
L
H
X
X
Burst-READ-Single-
WRITE
H
X
L
L
L
L
X
A9 Pin High
(Other Pins OP code)
Self Refresh
1
Entry
H
L
L
L
L
H
X
X
Exit
L
H
H
X
X
X
X
L
H
H
H
Precharge
power down
Entry
H
L
H
X
X
X
X
X
L
H
H
H
Exit
L
H
H
X
X
X
X
L
H
H
H
Clock Suspend
Entry
H
L
H
X
X
X
X
X
L
V
V
V
Exit
L
H
X
X
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