- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385418 > HY57V161610DTC-6I (HYNIX SEMICONDUCTOR INC) 2 Banks x 512K x 16 Bit Synchronous DRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | HY57V161610DTC-6I |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| 中文描述： | 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50 |
| 封裝： | 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 574K |
| 代理商： | HY57V161610DTC-6I |
HY57V161610D-I
Rev. 0.3/Mar. 02
4
ABSOLUTE MAXIMUM RATINGS
Note : Operation at above absolute maximum rating can adversely affect device reliability.
DC OPERATING CONDITION
(TA= -40
°
C
to 85
°
C
)
Note :
1.All voltages are referenced to V
SS
= 0V.
2.V
DD
(min) is 3.15V when HY57V161610DTC-7I operates at CAS latency=2
3.V
IH
(max) is acceptable 4.6V AC pulse width with
≤
10ns of duration.
4.V
IL
(min) is acceptable -1.5V AC pulse width with
≤
10ns of duration.
AC OPERATING CONDITION
(TA= - 40
°
C
to 85
°
C
, V
DD
=3.0V to
3.6V, V
SS
=0V)
Note :
1. Output load to measure access times is equivalent to two TTL gates and one capacitance(30pF).
For details, refer to AC/DC output load circuit.
2. V
DD
(min) is 3.15V when HY57V161610DTC-7I operates at CAS latency=2 and tCK2=8.9ns
Parameter
Symbol
Rating
Unit
Ambient Temperature
T
A
- 40 ~ 85
°
C
Storage Temperature
T
STG
-55 ~ 125
°
C
Voltage on Any Pin relative to V
SS
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
relative to V
SS
V
DD
-1.0 ~ 4.6
V
Short Circuit Output Current
I
OS
50
mA
Power Dissipation
P
D
1
W
Soldering Temperature
·
Time
T
SOLDER
260
·
10
°
C
·
Sec
Parameter
Symbol
Min
Typ.
Max
Unit
Note
Power Supply Voltage
V
DD
, V
DDQ
3.0
3.3
3.6
V
1, 2
Input high voltage
V
IH
2.0
3.0
V
DD
+ 0.3
V
1, 4
Input low voltage
V
IL
-0.5
0
0.8
V
1, 5
Parameter
Symbol
Value
Unit
Note
AC input high / low level voltage
V
IH
/ V
IL
2.4/0.4
V
Input timing measurement reference level voltage
Vtrip
1.4
V
Input rise / fall time
tR / tF
1
ns
Output timing measurement reference level
Voutref
1.4
V
Output load capacitance for access time measurement
CL
30
pF
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY57V161610DTC-7I | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ETP-I | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610DTC-10 | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610DTC-15 | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610D | 2 Banks x 512K x 16 Bit Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V161610DTC7 | 制造商:HYNIX 功能描述:* |
| HY57V161610DTC-7 | 制造商:SK Hynix Inc 功能描述: 制造商:HYUNDAI 功能描述:SDRAM, 1M x 16, 50 Pin, Plastic, TSOP |
| HY57V161610DTC-7I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610DTC-8 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610DTC-I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1Mx16|3.3V|4K|55/6/7/10|SDR SDRAM - 16M |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。