參數(shù)資料
型號: HY5DV651622T-G55
英文描述: DDR Synchronous DRAM
中文描述: DDR同步DRAM
文件頁數(shù): 21/27頁
文件大小: 273K
代理商: HY5DV651622T-G55
Rev. 0.3/May. 02
21
HY5DV281622AT
ABSOLUTE MAXIMUM RATINGS
Note :
Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS
(TA=0 to 70
o
C, Voltage referenced to V
SS
= 0V)
Note :
1. V
DDQ
must not exceed the level of V
DD
.
2. V
IL
(min) is acceptable -1.5V AC pulse width with
5ns of duration.
3. V
REF
is expected to be equal to 0.5*V
DDQ
of the transmitting device, and to track variations in the dc level of the same.
Peak to peak noise on V
REF
may not exceed
±
2% of the dc value.
Parameter
Symbol
Rating
Unit
Ambient Temperature
T
A
0 ~ 70
o
C
Storage Temperature
T
STG
-55 ~ 125
o
C
Voltage on Any Pin relative to V
SS
V
IN
, V
OUT
-0.5 ~ 3.6
V
Voltage on V
DD
relative to V
SS
V
DD
-0.5 ~ 3.6
V
Voltage on V
DDQ
relative to V
SS
V
DDQ
-0.5 ~ 3.6
V
Output Short Circuit Current
I
OS
50
mA
Power Dissipation
P
D
1.5
W
Soldering Temperature
Time
T
SOLDER
260
10
o
C
sec
Parameter
Symbol
Min
Typ.
Max
Unit
Note
Power Supply Voltage
V
DD
3.15
3.3
3.45
V
Power Supply Voltage
V
DDQ
2.375
2.5
2.625
V
1
Input High Voltage
V
IH
V
REF
+ 0.15
-
V
DDQ
+ 0.3
V
Input Low Voltage
V
IL
-0.3
-
V
REF
- 0.15
V
2
Termination Voltage
V
TT
V
REF
- 0.04
V
REF
V
REF
+ 0.04
V
Reference Voltage
V
REF
0.49*V
DDQ
0.5*V
DDQ
0.51*V
DDQ
V
3
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