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參數(shù)資料
| 型號： | HYB 314100BJL-60 |
| 廠商： | SIEMENS AG |
| 英文描述： | 4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1位 動態(tài) RAM(快速頁面模式)) |
| 中文描述： | 4米× 1位動態(tài)隨機(jī)存儲器（快速頁面模式）（4米× 1位動態(tài)隨機(jī)存儲器（快速頁面模式）） |
| 文件頁數(shù)： | 7/23頁 |
| 文件大小： | 1153K |
| 代理商： | HYB 314100BJL-60 |
Semiconductor Group
7
HYB 314100BJ/BJL-50/-60/-70
3.3V 4M x 1 DRAM
AC Characteristics
5)6)
T
A
= 0 to 70 C,
V
CC
= 3.3 V
±
0.3 V,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
-70
min.
max. min.
max. min.
max.
Common Parameters
Random read or write cycle time
t
RC
t
RP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
95
–
110
–
130
–
ns
RAS precharge time
35
–
40
–
50
–
ns
RAS pulse width
50
10k
60
10k
70
10k
ns
CAS pulse width
13
10k
15
10k
20
10k
ns
Row address setup time
0
–
0
–
0
–
ns
Row address hold time
8
–
10
–
10
–
ns
Column address setup time
0
–
0
–
0
–
ns
Column address hold time
10
–
15
–
15
–
ns
RAS to CAS delay time
18
37
20
45
20
50
ns
RAS to column address delay
time
13
25
15
30
15
35
ns
RAS hold time
t
RSH
t
CSH
t
CRP
t
T
t
REF
t
REF
13
15
–
20
–
ns
CAS hold time
50
60
–
70
–
ns
CAS to RAS precharge time
5
–
5
–
5
–
ns
Transition time (rise and fall)
3
50
3
50
3
50
ns
7
Refresh period
–
16
–
16
–
16
ms
Refresh period for L-version
–
128
–
128
–
128
ms
Read Cycle
Access time from RAS
t
RAC
t
CAC
t
AA
–
50
–
60
–
70
ns
8, 9
Access time from CAS
–
13
–
15
–
20
ns
8, 9
Access time from column
address
–
25
–
30
–
35
ns
8,10
Column addr. to RAS lead time
t
RAL
t
RCS
t
RCH
t
RRH
25
–
30
–
35
–
ns
Read command setup time
0
–
0
–
0
–
ns
Read command hold time
0
–
0
–
0
–
ns
11
Read command hold time
referenced to RAS
0
–
0
–
0
–
ns
11
CAS to output in low-Z
t
CLZ
0
–
0
–
0
–
ns
8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB 314100BJL-70 | 4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1位 動態(tài) RAM(快速頁面模式)) |
| HYB314100BJL-50 | 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314100BJL-60 | 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314100BJL-70 | 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB 314175BJ-50 | 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16位 外延式數(shù)據(jù)輸出（EDO)動態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB314100BJL-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314100BJL-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314171BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
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