參數(shù)資料
型號: HYB 314175BJ-50
廠商: SIEMENS AG
英文描述: 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16位 外延式數(shù)據(jù)輸出(EDO)動態(tài)RAM)
中文描述: 3.3V的256畝× 16位江戶的DRAM(3.3 256K × 16位外延式數(shù)據(jù)輸出(EDO公司)動態(tài)內(nèi)存)
文件頁數(shù): 4/24頁
文件大小: 1307K
代理商: HYB 314175BJ-50
HYB 314175BJ/BJL-50/-55/-60
3.3V 256K x 16 EDO-DRAM
Semiconductor Group
4
Block Diagram
相關(guān)PDF資料
PDF描述
HYB314175BJ-50- High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85
HYB314175BJ-55 High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85
HYB314175BJ-60 Transistor Array IC; Package/Case:16-DIP; Mounting Type:Through Hole
HYB 314175BJ-55 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16位 外延式數(shù)據(jù)輸出(EDO)動態(tài)RAM)
HYB 314175BJ-60 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16位 外延式數(shù)據(jù)輸出(EDO)動態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB314175BJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
HYB314175BJ-50- 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
HYB314175BJ-55 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
HYB314175BJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
HYB314175BJL-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh