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參數(shù)資料
| 型號： | HYB 314175BJ-50 |
| 廠商： | SIEMENS AG |
| 英文描述： | 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16位 外延式數(shù)據(jù)輸出（EDO)動態(tài)RAM) |
| 中文描述： | 3.3V的256畝× 16位江戶的DRAM（3.3 256K × 16位外延式數(shù)據(jù)輸出（EDO公司）動態(tài)內(nèi)存） |
| 文件頁數(shù)： | 8/24頁 |
| 文件大?。?/td> | 1307K |
| 代理商： | HYB 314175BJ-50 |
HYB 314175BJ/BJL-50/-55/-60
3.3V 256K x 16 EDO-DRAM
Semiconductor Group
8
Output buffer turn-off delay from
CAS
Output buffer turn-off delay from OE
t
OEZ
Data to OE low delay
t
OFF
0
13
0
13
0
15
ns
12
0
13
0
13
0
15
ns
12
t
DZO
t
CDD
t
ODD
0
–
0
–
0
–
ns
13
CAS high to data delay
10
–
10
–
13
–
ns
14
OE high to data delay
10
–
10
–
13
–
ns
14
Write Cycle
Write command hold time
t
WCH
t
WP
t
WCS
t
RWL
t
CWL
t
DS
t
DH
t
DZC
8
–
8
–
10
–
ns
Write command pulse width
8
–
8
–
10
–
ns
Write command setup time
0
–
0
–
0
–
ns
15
Write command to RAS lead time
13
–
13
–
15
–
ns
Write command to CAS lead time
13
–
13
–
15
–
ns
Data setup time
0
–
0
–
0
–
ns
16
Data hold time
8
–
8
–
10
–
ns
16
Data to CAS low delay
0
–
0
–
0
–
ns
13
Read-modify-Write Cycle
Read-write cycle time
t
RWC
t
RWD
t
CWD
t
AWD
t
OEH
118
–
122
–
138
–
ns
RAS to WE delay time
64
–
69
–
77
–
ns
15
CAS to WE delay time
27
–
27
–
32
–
ns
15
Column address to WE delay time
39
–
39
–
47
–
ns
15
OE command hold time
10
–
10
–
13
–
ns
Hyper Page Mode (EDO) Cycle
Hyper page mode cycle time
t
HPC
t
CP
t
CPA
t
COH
t
RAS
20
–
20
–
25
–
ns
CAS precharge time
8
–
8
–
10
–
ns
Access time from CAS precharge
–
27
–
27
–
32
ns
7
Output data hold time
5
–
5
–
5
–
ns
RAS pulse width in hyper page
mode
RAS hold time from CAS precharge
t
RHCP
50
200k
55
200k
60
200k
ns
27
–
27
–
32
–
ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-55
-60
min
max min
max min
max
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| HYB314175BJ-55 | High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 |
| HYB314175BJ-60 | Transistor Array IC; Package/Case:16-DIP; Mounting Type:Through Hole |
| HYB 314175BJ-55 | 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16位 外延式數(shù)據(jù)輸出（EDO)動態(tài)RAM) |
| HYB 314175BJ-60 | 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16位 外延式數(shù)據(jù)輸出（EDO)動態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB314175BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| HYB314175BJ-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| HYB314175BJ-55 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| HYB314175BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| HYB314175BJL-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
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