- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370744 > HYB 39S64160BT (SIEMENS AG) 4M x 16 MBit Synchronous DRAM for High Speed Graphics Applications(64M位(4列 × 1M位 × 16)同步動(dòng)態(tài)RAM（用于高速圖形場(chǎng)合）) PDF資料下載
參數(shù)資料
| 型號(hào)： | HYB 39S64160BT |
| 廠商： | SIEMENS AG |
| 英文描述： | 4M x 16 MBit Synchronous DRAM for High Speed Graphics Applications(64M位(4列 × 1M位 × 16)同步動(dòng)態(tài)RAM（用于高速圖形場(chǎng)合）) |
| 中文描述： | 4米× 16兆比特同步DRAM）的高速圖形應(yīng)用程序（6400位（4列× 1位× 16）同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器（用于高速圖形場(chǎng)合） |
| 文件頁(yè)數(shù)： | 11/18頁(yè) |
| 文件大小： | 118K |
| 代理商： | HYB 39S64160BT |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)當(dāng)前第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)
INFINEON Technologies
11
HYB39S6416A/BT-5.5/-6/-7
64MBit Synchronous DRAM
Absolute Maximum Ratings
Operating temperature range......................................................................................... 0 to + 70
°
C
Storage temperature range.....................................................................................
– 55 to + 150
°
C
Input/output voltage ..............................................................................– 0.5 to min(Vcc+0.5, 4.6) V
Power supply voltage VDD / VDDQ..........................................................................– 1.0 to + 4.6 V
Power Dissipation............................................. ..........................................................................1 W
Data out current (short circuit) ................................................................................................50 mA
Note:
Stresses above those listed under
“
Absolute Maximum Ratings
”
may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
Recommended Operation and Characteristics :
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD,
V
DDQ
= 3.3 V
±
0.3 V
Notes:
1. All voltages are referenced to VSS.
2. Vih may overshoot to Vdd + 2.0 V for pulse width of < 4ns with 3.3V. Vil may undershoot to
-2.0 V for pulse width < 4.0 ns with 3.3V. Pulse width measured at 50% points with amplitude measured peak
to DC reference.
Capacitance
T
A
= 0 to 70
°
C;
V
DD
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
Limit Values
Unit Notes
min.
max.
Input high voltage
V
I
H
V
I
L
V
OH
V
OL
I
I
(L)
2.0
Vdd+0.3
V
1, 2
Input low voltage
Output high voltage (
I
OUT
= – 4.0 mA)
Output low voltage (
I
OUT
=4.0 mA)
Input leakage current, any input
(0 V <
V
I
N
< Vddq, all other inputs = 0 V)
Output leakage current
(DQ is disabled, 0 V <
V
OUT
<
Vdd
)
– 0.3
0.8
V
1, 2
2.4
–
V
–
0.4
V
μ
A
– 5
5
I
O(L)
– 5
5
μ
A
Parameter
Symbol
Values
Unit
min.
max.
Input capacitance
(CLK)
C
I
1
C
I
2
2.5
3.5
pF
Input capacitance
(A0-A12, BA0,BA1,RAS, CAS, WE, CS, CKE, DQM)
2.5
3.8
pF
Input / Output capacitance
(DQ)
C
I
O
4.0
6.0
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB 39S64400BT | 64MBit Synchronous DRAM(64M位(4列 × 4M位 × 4)同步動(dòng)態(tài)RAM) |
| HYB 39S64800BT | 64MBit Synchronous DRAM(64M位(4列 × 2M位 × 8)同步動(dòng)態(tài)RAM) |
| HYB 39S64XXX0BTL | 64MBitSynchronous DRAM(64M位同步動(dòng)態(tài)RAM(低功耗版)) |
| HYB 39S64400CT | 64MBit Synchronous DRAM(64M位(4列 × 4M位 × 4)同步動(dòng)態(tài)RAM) |
| HYB 39S64800CT | 64MBit Synchronous DRAM(64M位(4列 × 2M位 × 8)同步動(dòng)態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39S64160BT-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HYB39S64160BT-5.5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HYB39S64160BT-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HYB39S64160BT-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:64-MBit Synchronous DRAM |
| HYB39S64160BT-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:64-MBit Synchronous DRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。