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參數(shù)資料
| 型號(hào)： | HYB 39S64160BT |
| 廠商： | SIEMENS AG |
| 英文描述： | 4M x 16 MBit Synchronous DRAM for High Speed Graphics Applications(64M位(4列 × 1M位 × 16)同步動(dòng)態(tài)RAM（用于高速圖形場(chǎng)合）) |
| 中文描述： | 4米× 16兆比特同步DRAM）的高速圖形應(yīng)用程序（6400位（4列× 1位× 16）同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器（用于高速圖形場(chǎng)合） |
| 文件頁(yè)數(shù)： | 16/18頁(yè) |
| 文件大?。?/td> | 118K |
| 代理商： | HYB 39S64160BT |
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INFINEON Technologies
16
HYB39S6416A/BT-5.5/-6/-7
64MBit Synchronous DRAM
Notes for AC Parameters:
1. For proper power-up see the operation section of this data sheet.
2. AC timing tests for LV-TTL versions have V
il
= 0.4 V and V
ih
= 2.4 V with the timing referenced to the 1.5 V
crossover point. The transition time is measured between V
ih
and V
il
. All AC measurements assume t
T
=1ns
with the AC output load circuit shown in fig.1. Specified tac and toh parameters are measured with a 30 pF only,
without any resistive termination and with a input signal of 1V / ns edge rate between 0.8V and 2.0 V..
3. If clock rising time is longer than 1 ns, a time (t
T
/2 - 0.5) ns has to be added to this parameter.
4. If tT is longer than 1 ns, a time (t
T
-1) ns has to be added to this parameter.
5. These parameter account for the number of clock cycle and depend on the operating frequency of the clock,
as follows:
the number of clock cycle = specified value of timing period (counted in fractions as a whole number)
Self Refresh Exit is a synchronous operation and begins on the 2nd positive clock edge after CKE returns high.
Self Refresh Exit is not complete until a time period equal to tRC is satisfied once the Self Refresh Exit
command is registered.
fig.1
50 pF
I/O
Measurement conditions for
tac and toh
SPS03410
Output
V
50
pF
30
50
=
Z
tt
+
SPT03404
CLOCK
2.4 V
0.4 V
INPUT
HOLD
t
SETUP
t
t
T
OUTPUT
1.4 V
t
LZ
AC
t
t
AC
OH
t
HZ
t
1.4 V
CL
t
CH
t
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| HYB 39S64800BT | 64MBit Synchronous DRAM(64M位(4列 × 2M位 × 8)同步動(dòng)態(tài)RAM) |
| HYB 39S64XXX0BTL | 64MBitSynchronous DRAM(64M位同步動(dòng)態(tài)RAM(低功耗版)) |
| HYB 39S64400CT | 64MBit Synchronous DRAM(64M位(4列 × 4M位 × 4)同步動(dòng)態(tài)RAM) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39S64160BT-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HYB39S64160BT-5.5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HYB39S64160BT-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HYB39S64160BT-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:64-MBit Synchronous DRAM |
| HYB39S64160BT-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:64-MBit Synchronous DRAM |
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