參數(shù)資料
型號: HYB 5118165BST-50
廠商: SIEMENS AG
英文描述: 1M×16-Bit Dynamic RAM(1M×16位 動態(tài)RAM(快速頁面模式))
中文描述: 100萬× 16位動態(tài)隨機存儲器(100萬× 16位動態(tài)隨機存儲器(快速頁面模式))
文件頁數(shù): 8/24頁
文件大?。?/td> 192K
代理商: HYB 5118165BST-50
HYB 5118165BSJ/BST-50/-60
HYB 3118165BSJ/BST-50/-60
1M
×
16 EDO-DRAM
Semiconductor Group
8
1998-10-01
Column address to RAS lead time
t
RAL
t
RCS
t
RCH
25
30
ns
Read command setup time
0
0
ns
Read command hold time
Read command hold time referenced to RAS
t
RRH
CAS to output in low-Z
0
0
ns
11
0
0
ns
11
t
CLZ
t
OFF
t
OEZ
t
DZC
t
DZO
t
CDD
t
ODD
0
0
ns
8
Output buffer turn-off delay
0
13
0
15
ns
12
Output turn-off delay from OE
0
13
0
15
ns
12
Data to CAS low delay
0
0
ns
13
Data to OE low delay
0
0
ns
13
CAS high to data delay
10
13
ns
14
OE high to data delay
10
13
ns
14
Write Cycle
Write command hold time
t
WCH
t
WP
t
WCS
t
RWL
t
CWL
t
DS
t
DH
8
10
ns
Write command pulse width
8
10
ns
Write command setup time
0
0
ns
15
Write command to RAS lead time
8
10
ns
Write command to CAS lead time
8
10
ns
Data setup time
0
0
ns
16
Data hold time
8
10
ns
16
Read-Modify-Write Cycle
Read-write cycle time
t
RWC
t
RWD
t
CWD
t
AWD
t
OEH
113
138
ns
RAS to WE delay time
64
77
ns
15
CAS to WE delay time
27
32
ns
15
Column address to WE delay time
39
47
ns
15
OE command hold time
10
13
ns
Hyper Page Mode (EDO) Cycle
Hyper page mode (EDO) cycle time
t
HPC
t
CP
20
25
ns
CAS precharge time
8
10
ns
AC Characteristics
(cont’d)
5, 6
T
A
= 0 to 70
°
C,
V
CC
= 5 V
±
10 % /
V
CC
= 3.3 V
±
0.3 V,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
min.
max. min.
max.
相關PDF資料
PDF描述
HYB3118165BSJ-60 High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85
HYB3118165BST-50 High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85
HYB3118165BST-60 High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85
HYB 3118165BSJ 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16位 動態(tài) RAM)
HYB 3118165BST-50 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16位 動態(tài) RAM)
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