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參數(shù)資料
| 型號： | HYB3118165BSJ-60 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 |
| 中文描述： | 1M X 16 EDO DRAM, 60 ns, PDSO42 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-42 |
| 文件頁數(shù)： | 1/24頁 |
| 文件大?。?/td> | 192K |
| 代理商： | HYB3118165BSJ-60 |
Semiconductor Group
1
1998-10-01
1 048 576 words by 16-bit organization
0 to 70
°
C operating temperature
Hyper Page Mode-EDO-operation
Performance:
Power Dissipation, Refresh & Addressing:
Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh and hidden refresh
All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible
Plastic Package: P-SOJ-42-1
400 mil
P-TSOPII-50/44-1 400 mil
-50
-60
t
RAC
t
CAC
t
AA
t
RC
t
HPC
RAS access time
50
60
ns
CAS access time
13
15
ns
Access time from address
25
30
ns
Read/Write cycle time
84
104
ns
Hyper page mode (EDO) cycle time
20
25
ns
HYB5118165
HYB3118165
-50
5 V
±
10 %
10/10
-60
-50
3.3 V
±
0.3 V
10/10
-60
Power Supply
Addressing
Refresh
1024 cycles / 16 ms
Active
715
632
468
414
mW
TTL Standby
11
7.2
mW
CMOS Standby
5.5
3.6
mW
1M
×
16-Bit Dynamic RAM
1k Refresh
(Hyper Page Mode-EDO)
Advanced Information
HYB 5118165BSJ/BST-50/-60
HYB 3118165BSJ/BST-50/-60
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB3118165BST-50 | High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 |
| HYB3118165BST-60 | High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 |
| HYB 3118165BSJ | 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16位 動態(tài) RAM) |
| HYB 3118165BST-50 | 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16位 動態(tài) RAM) |
| HYB 3118165BST-60 | 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16位 動態(tài) RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3118165BST-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh |
| HYB3118165BST-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh |
| HYB314100BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314100BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314100BJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
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