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參數(shù)資料
| 型號： | HYB 514175BJ-50 |
| 廠商： | SIEMENS AG |
| 英文描述： | 256k × 16-Bit Dynamic RAM(256k × 16位 動(dòng)態(tài) RAM) |
| 中文描述： | 256k × 16位動(dòng)態(tài)隨機(jī)存儲(chǔ)器（256k × 16位動(dòng)態(tài)內(nèi)存） |
| 文件頁數(shù)： | 2/22頁 |
| 文件大?。?/td> | 177K |
| 代理商： | HYB 514175BJ-50 |
HYB 514175BJ/BJL-50/-55/-60
256k
×
16 EDO-DRAM
Semiconductor Group
2
1998-10-01
The HYB 514175BJ is the new generation dynamic RAM organized as 262 144 words by 16-bit.
The HYB 514175BJ utilizes CMOS silicon gate process as well as advanced circuit techniques to
provide wide operation margins, both internally and for the system user. Multiplexed address inputs
permit the HYB 514175BJ to be packed in a standard plastic 400 mil wide P-SOJ-40-1 package.
This package size provides high system bit densities and is compatible with commonly used
automatic testing and insertion equipment. System oriented features include single + 5 V (
±
10 %)
power supply, direct interfacing with high performance logic device families such as Schottky TTL.
Ordering Information
Type
Ordering Code
Package
Description
50 ns 256k
×
16 EDO-DRAM
55 ns 256k
×
16 EDO-DRAM
60 ns 256k
×
16 EDO-DRAM
HYB 514175BJ-50
Q67100-Q2072
P-SOJ-40-1 400 mil
HYB 514175BJ-55
Q67100-Q2100
P-SOJ-40-1 400 mil
HYB 514175BJ-60
Q67100-Q2073
P-SOJ-40-1 400 mil
Truth Table
RAS
LCAS
UCAS
WE
OE
I/O1 - I/O8
I/O9 - I/O16
Operation
H
L
L
L
L
L
L
L
L
H
H
L
H
L
L
H
L
L
H
H
H
L
L
H
L
L
L
H
H
H
H
H
L
L
L
H
H
H
L
L
L
H
H
H
H
High-Z
High-Z
Dout
High-Z
Dout
Din
Don't care
Din
High-Z
High-Z
High-Z
High-Z
Dout
Dout
Don't care
Din
Din
High-Z
Standby
Refresh
Lower byte read
Upper byte read
Word read
Lower byte write
Upper byte write
Word write
Pin Names
A0 - A8
Address Inputs
RAS
Row Address Strobe
UCAS, LCAS
Column Address Strobe
WE
Read/Write Input
OE
Output Enable
I/O1 -I/O16
V
CC
V
SS
N.C.
Data Input/Output
Power Supply (+ 5 V)
Ground (0 V)
No Connection
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB 514175BJ-55 | 256k × 16-Bit Dynamic RAM(256k × 16位 動(dòng)態(tài) RAM) |
| HYB 514175BJ-60 | 256k × 16-Bit Dynamic RAM(256k × 16位 動(dòng)態(tài) RAM) |
| HYB514175BJ-50- | 256k x 16-Bit EDO-DRAM |
| HYB514175BJ-55 | 256k x 16-Bit EDO-DRAM |
| HYB514175BJ-60 | 256k x 16-Bit EDO-DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB514175BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256k x 16-Bit EDO-DRAM |
| HYB514175BJ-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256k x 16-Bit EDO-DRAM |
| HYB514175BJ-55 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256k x 16-Bit EDO-DRAM |
| HYB514175BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256k x 16-Bit EDO-DRAM |
| HYB514175BJL-50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 EDO Page Mode DRAM |
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